ADF4150HVBCPZ-RL7 datasheet(6/28 Pages) AD

部件名	ADF4150HVBCPZ-RL7

功能描述	High Voltage, Fractional-N

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制造商	AD [Analog Devices]

网页	http://www.analog.com

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6 / 28 page

ADF4150HV

Rev. 0 | Page 6 of 28

ABSOLUTE MAXIMUM RATINGS

TA = 25°C, unless otherwise noted.

Table 3.

Parameter

Rating

AVDD to GND1

−0.3 V to +3.9 V

AVDD to DVDD

−0.3 V to +0.3 V

VP to GND1

−0.3 V to +33 V

Digital I/O Voltage to GND1

−0.3 V to AVDD + 0.3 V

Analog I/O Voltage to GND1

−0.3 V to DVDD + 0.3 V

REFIN to GND1

−0.3 V to AVDD + 0.3 V

Operating Temperature Range

−40°C to +85°C

Storage Temperature Range

−65°C to +125°C

Maximum Junction Temperature

150°C

Reflow Soldering

Peak Temperature

260°C

Time at Peak Temperature

40 sec

1 GND = CPGND = SDGND = 0 V.

Stresses above those listed under Absolute Maximum Ratings

may cause permanent damage to the device. This is a stress

rating only; functional operation of the device at these or any

other conditions above those indicated in the operational

section of this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may affect

device reliability.

TRANSISTOR COUNT

The transistor count for the ADF4150HV is 23,380 (CMOS)

and 809 (bipolar).

THERMAL RESISTANCE

Thermal impedance (θJA) is specified for a device with the

exposed pad soldered to GND.

Table 4. Thermal Resistance

Package Type

θJA

Unit

32-Lead LFCSP (CP-32-11)

27.3

°C/W

ESD CAUTION

类似零件编号 - ADF4150HVBCPZ-RL7

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Analog Devices	ADF4150	818Kb / 28P	Fractional-N/Integer-N PLL Synthesizer
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类似说明 - ADF4150HVBCPZ-RL7

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