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CDBMH1100-G 数据表(PDF) 1 Page - Comchip Technology |
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CDBMH1100-G 数据表(HTML) 1 Page - Comchip Technology |
1 / 4 page Parameter Symbol Unit Max. Repetitive peak reverse voltage Max. Continuous reverse voltage Max. RMS voltage Maximum Instantaneous forward voltage at IF=1.0A Max. Forward surge current, 8.3ms single half sine-wave superimposed on rated load (JEDEC method) Max.Reverse current VR=VRRM TJ=25°C Typ. Thermal resistance (Junction to case) Typ. Diode Junction capacitance (Note 1) Reverse Voltage: 20 to 150 Volts Forward Current: 1.0 Amp RoHS Device Dimensions in inches and (millimeter) CDBMH120-G Thru. CDBMH1150-G Page 1 QW-BB038 SMD Schottky Barrier Rectifiers REV:A Comchip Technology CO., LTD. SOD-123T 0.154(3.9) 0.138(3.5) 0.012(0.3) Typ. 0.071(1.8) 0.055(1.4) 0.067(1.7) 0.051(1.3) 0.039(1.0) 0.094(2.4) VRRM VR VRMS IO VF IFSM IR RθJC CJ TJ CDBMH 120-G CDBMH 140-G CDBMH 160-G CDBMH 180-G CDBMH 1150-G 20 20 14 40 40 28 60 60 42 1.0 0.70 30 0.2 10 45 80 80 56 100 100 70 V V V A V A mA °C/W 0.50 0.85 Note : Operating temperature Storage temperature range TSTG -65 to +175 °C -55 to +125 -55 to +150 120 pF CDBMH 130-G 30 30 21 CDBMH 150-G 50 50 35 0.079(2.0) 0.024(0.6) 0.008(0.20) Typ. 0.044(1.10) 0.028(0.70) 0.035(0.9) 0.063(1.6) 0.047(1.2) 0.020(0.5) 0.037(0.95) 0.030(0.75) 0.051(1.3) 0.035(0.9) 0.024(0.6) Typ. 1. F=1MHz and applied 4V DC reverse voltage VR=VRRM TJ=100°C IR CDBMH 1100-G 150 150 105 Max. averaged forward current (see fig.1) 0.92 °C Features -Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. -Low profile surface mounted application in order to optimize board space. -Low power loss, high efficiency. -High current capability, low forward voltage drop. -High surge capability. -Guardring for overvoltage protection. -Ultra high-speed switching. -Silicon epitaxial planar chip, metal silicon junction. -Lead-free parts meet environmental standards of MIL-STD-19500 /228 Mechanical data Case: SOD-123T/ Mini SMA. Molded plastic. - -Terminals: Plated terminals, solderable per MIL-STD-750, method 2026. Polarity: Indicated by cathode band. - -Weight: 0.018 gram(approx.). Mounting Position: Any - -Heat Sink bottom. Maximum Ratings (at TA=25°C unless otherwise noted) |
类似零件编号 - CDBMH1100-G |
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类似说明 - CDBMH1100-G |
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