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MCM6706J7 数据表(PDF) 2 Page - Motorola, Inc |
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MCM6706J7 数据表(HTML) 2 Page - Motorola, Inc |
2 / 7 page MCM6706BR 2 MOTOROLA FAST SRAM TRUTH TABLE E G W Mode I/O Pin Cycle H X X Not Selected High–Z — L H H Read High–Z — L L H Read Dout Read Cycle L X L Write Din Write Cycle ABSOLUTE MAXIMUM RATINGS (See Note) Rating Symbol Value Unit Power Supply Voltage VCC – 0.5 to + 7.0 V Voltage Relative to VSS for Any Pin Except VCC Vin, Vout – 0.5 to VCC + 0.5 V Output Current Iout ± 30 mA Power Dissipation PD 2.0 W Temperature Under Bias Tbias – 10 to + 85 °C Operating Temperature TA 0 to + 70 °C Storage Temperature — Plastic Tstg – 55 to + 125 °C NOTE: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to RECOMMENDED OPER- ATING CONDITIONS. Exposure to higher than recommended voltages for extended periods of time could affect device reliability. DC OPERATING CONDITIONS AND CHARACTERISTICS (VCC = 5.0 V ± 10%, TA = 0 to 70°C, Unless Otherwise Noted) RECOMMENDED OPERATING CONDITIONS Parameter Symbol Min Typ Max Unit Supply Voltage (Operating Voltage Range) VCC 4.5 5.0 5.5 V Input High Voltage VIH 2.2 — VCC + 0.3* V Input Low Voltage VIL – 0.5 ** — 0.8 V *VIH (max) = VCC + 0.3 V dc; VIH (max) = VCC + 2.0 V ac (pulse width ≤ 2.0 ns) or I ≤ 30.0 mA. ** VIL (min) = – 0.5 V dc @ 30.0 mA; VIL (min) = – 2.0 V ac (pulse width ≤ 2.0 ns) or I ≤ 30.0 mA. DC CHARACTERISTICS Parameter Symbol Min Max Unit Input Leakage Current (All Inputs, Vin = 0 to VCC) Ilkg(I) — ± 1.0 µA Output Leakage Current (E = VIH or G = VIH, Vout = 0 to VCC) Ilkg(O) — ± 1.0 µA Output High Voltage (IOH = – 4.0 mA) VOH 2.4 — V Output Low Voltage (IOL = + 8.0 mA) VOL — 0.4 V POWER SUPPLY CURRENTS Parameter Symbol –6 –7 –8 Unit Notes AC Active Supply Current (Iout = 0 mA, VCC = max, f = fmax) ICCA 215 205 195 mA 1, 2, 3 AC Standby Current (E = VIH, VCC = max, f = fmax) ISB1 95 85 75 mA 1, 2, 3 CMOS Standby Current (VCC = max, f = 0 MHz, E ≥ VCC – 0.2 V, Vin ≤ VSS, or ≥ VCC – 0.2 V) ISB2 20 20 20 mA NOTES: 1. Reference AC Operating Conditions and Characteristics for input and timing (VIH/VIL, tr/tf, pulse level 0 to 3.0 V, VIH = 3.0 V). 2. All addresses transition simultaneously low (LSB) and then high (MSB). 3. Data states are all zero. This device contains circuitry to protect the inputs against damage due to high static volt- ages or electric fields; however, it is advised that normal precautions be taken to avoid appli- cation of any voltage higher than maximum rated voltages to this high–impedance circuit. This BiCMOS memory circuit has been de- signed to meet the dc and ac specifications shown in the tables, after thermal equilibrium has been established. The circuit is in a test socket or mounted on a printed circuit board and transverse air flow of at least 500 linear feet per minute is maintained. |
类似零件编号 - MCM6706J7 |
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类似说明 - MCM6706J7 |
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