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MCM6706CR Datasheet(数据表) 2 Page - Motorola, Inc

部件型号  MCM6706CR
说明  32K x 8 Bit Static Random Access Memory
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制造商  MOTOROLA [Motorola, Inc]
网页  http://www.freescale.com
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MCM6706CR Datasheet(HTML) 2 Page - Motorola, Inc

   
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MCM6706CR
2
MOTOROLA FAST SRAM
TRUTH TABLE
E
G
W
Mode
I/O Pin
Cycle
H
X
X
Not Selected
High–Z
L
H
H
Read
High–Z
L
L
H
Read
Dout
Read Cycle
L
X
L
Write
Din
Write Cycle
ABSOLUTE MAXIMUM RATINGS (See Note)
Rating
Symbol
Value
Unit
Power Supply Voltage
VCC
– 0.5 to + 7.0
V
Voltage Relative to VSS for Any Pin
Except VCC
Vin, Vout
– 0.5 to VCC + 0.5
V
Output Current
Iout
± 30
mA
Power Dissipation
PD
2.0
W
Temperature Under Bias
Tbias
– 10 to + 85
°C
Operating Temperature
TA
0 to + 70
°C
Storage Temperature — Plastic
Tstg
– 55 to + 125
°C
NOTE: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are
exceeded. Functional operation should be restricted to RECOMMENDED
OPERATING CONDITIONS. Exposure to higher than recommended voltages for
extended periods of time could affect device reliability.
DC OPERATING CONDITIONS AND CHARACTERISTICS
(VCC = 5.0 V ± 10%, TA = 0 to 70°C, Unless Otherwise Noted)
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage (Operating Voltage Range)
VCC
4.5
5.0
5.5
V
Input High Voltage
VIH
2.2
VCC + 0.3*
V
Input Low Voltage
VIL
– 0.5
**
0.8
V
*VIH (max) = VCC + 0.3 V dc; VIH (max) = VCC + 2.0 V ac (pulse width ≤ 2.0 ns) or I ≤ 30.0 mA.
** VIL (min) = – 0.5 V dc @ 30.0 mA; VIL (min) = – 2.0 V ac (pulse width ≤ 2.0 ns) or I ≤ 30.0 mA.
DC CHARACTERISTICS
Parameter
Symbol
Min
Max
Unit
Input Leakage Current (All Inputs, Vin = 0 to VCC)
Ilkg(I)
± 1.0
µA
Output Leakage Current (E = VIH or G = VIH, Vout = 0 to VCC)
Ilkg(O)
± 1.0
µA
Output High Voltage (IOH = – 4.0 mA)
VOH
2.4
V
Output Low Voltage (IOL = + 8.0 mA)
VOL
0.4
V
POWER SUPPLY CURRENTS
Parameter
Symbol
MCM6706CR–5
MCM6706CR–5.5
Unit
Notes
AC Active Supply Current
(Iout = 0 mA, VCC = max, f = fmax)
ICCA
240
235
mA
1, 2, 3
AC Standby Current (E = VIH, VCC = max, f = fmax)
ISB1
120
115
mA
1, 2, 3
CMOS Standby Current (VCC = max, f = 0 MHz,
E
≥ VCC – 0.2 V, Vin ≤ VSS, or ≥ VCC – 0.2 V)
ISB2
30
30
mA
NOTES:
1. Reference AC Operating Conditions and Characteristics for input and timing (VIH/VIL, tr/tf, pulse level 0 to 3.0 V, VIH = 3.0 V).
2. All addresses transition simultaneously low (LSB) and then high (MSB).
3. Data states are all zero.
This device contains circuitry to protect the
inputs against damage due to high static volt-
ages or electric fields; however, it is advised
that normal precautions be taken to avoid appli-
cation of any voltage higher than maximum
rated voltages to this high–impedance circuit.
This BiCMOS memory circuit has been de-
signed to meet the dc and ac specifications
shown in the tables, after thermal equilibrium
has been established. The circuit is in a test
socket or mounted on a printed circuit board
and transverse air flow of at least 500 linear feet
per minute is maintained.




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