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UF3710G-TA3-T 数据表(PDF) 2 Page - Unisonic Technologies |
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UF3710G-TA3-T 数据表(HTML) 2 Page - Unisonic Technologies |
2 / 6 page UF3710 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 6 www.unisonic.com.tw QW-R203-036.E ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Gate-Source Voltage VGSS ±20 V Drain-Source Voltage VDSS 100 V Drain Current Continuous (VGS=10V) ID 57 A Pulsed (Note 2) IDM 230 Avalanche Current (Note 2) IAR 57 A Avalanche Energy Repetitive(Note 2) EAR 20 mJ Single Pulsed(Note 3) EAS 1060 (Note 4) Power Dissipation PD 165 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note:1. 2. 3. 4. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. Pulse width limited by TJ(MAX) TJ=25°C, L=0.65mH, RG=25Ω, IAS=57A, VGS=10V This is a typical value at device destruction and represents operation outside rated limits. THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 62 /W ℃ Junction to Case θJC 0.75 /W ℃ ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250μA 100 V Drain-Source Leakage Current IDSS VDS=100V, VGS=0V 25 μA Gate-Source Leakage Current IGSS VGS=±20V, VDS=0V ±100 nA Breakdown Voltage Temperature Coefficient BV △ DSS/△TJ ID=1mμA,Referenced to 25℃ 0.13 V/°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250μA 2.0 4.0 V Static Drain-Source On-Resistance RDS(ON) VGS=10V, ID=28A (Note) 23 mΩ Forward Transconductance gFS VDS=25V, ID=28 A 32 S DYNAMIC PARAMETERS Input Capacitance CISS VDS=25V, VGS=0V, f =1MHz 3130 pF Output Capacitance COSS 410 pF Reverse Transfer Capacitance CRSS 72 pF |
类似零件编号 - UF3710G-TA3-T |
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类似说明 - UF3710G-TA3-T |
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