PZT5551 datasheet(2/4 Pages) UTC

部件名	PZT5551

功能描述	HIGH VOLTAGE SWITCHING TRANSISTOR

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制造商	UTC [Unisonic Technologies]

网页	http://www.utc-ic.com

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PZT5551

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R207-007,E

ABSOLUATE MAXIUM RATINGS (TA = 25°C)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

180

V

Collector-Emitter Voltage

VCEO

160

V

Emitter-Base Voltage

VEBO

6

V

DC Collector Current

IC

600

mA

Power Dissipation

PC

2

W

Operating Junction Temperature

TJ

+150

°C

Storage Temperature

TSTG

-65 ~ +150

°C

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

θJA

62.5

°C/W

ELECTRICAL CHARACTERISTICS (TA= 25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector-Base Breakdown Voltage

BVCBO

IC=100μA, IE=0

180

V

Collector-Emitter Breakdown Voltage

BVCEO

IC=1mA, IB=0

160

V

Emitter-Base Breakdown Voltage

BVEBO

IE=10μA, IC=0

6

V

Collector Cut-off Current

ICBO

VCB=120V, IE=0

50

nA

Emitter Cut-off Current

IEBO

VBE=4V, IC=0

50

nA

DC Current Gain (Note)

hFE

VCE=5V, IC=1mA

80

VCE=5V, IC=10mA

80

160

400

VCE=5V, IC=50mA

80

Collector-Emitter Saturation Voltage

VCE(SAT)

IC=10mA, IB=1mA

0.15

V

IC=50mA, IB=5mA

0.2

Base-Emitter Saturation Voltage

VBE(SAT)

IC=10mA, IB=1mA

1

V

IC=50mA, IB=5mA

1

Current Gain Bandwidth Product

fT

VCE=10V, IC=10mA, f=100MHz

100

300

MHz

Output Capacitance

Cob

VCB=10V, IE=0, f=1MHz

6.0

pF

Noise Figure

NF

IC=0.25mA, VCE=5V

RS=1kΩ, f=10Hz ~ 15.7kHz

8

dB

Note: Pulse test: PW<300μs, Duty Cycle<2%

CLASSIFICATION OF hFE

RANK

A

B

C

RANGE

80-170

150-240

200-400

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