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6N65G-TF1-T 数据表(PDF) 2 Page - Unisonic Technologies |
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6N65G-TF1-T 数据表(HTML) 2 Page - Unisonic Technologies |
2 / 6 page 6N65 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 6 www.unisonic.com.tw QW-R502-589.B ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 6.2 A Continuous Drain Current ID 6.2 A Pulsed Drain Current (Note 2) IDM 24.8 A Avalanche Energy Single Pulsed (Note 3) EAS 440 mJ Repetitive (Note 2) EAR 13 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 ns Power Dissipation TO-220 PD 125 W TO-220F/TO-220F1 40 W TO-251/TO-252 55 W Junction Temperature TJ +150 °C Operating Temperature TOPR -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by TJ 3. L = 14mH, IAS = 6A, VDD = 90V, RG = 25 Ω, Starting TJ = 25°C 4. ISD ≤ 6.2A, di/dt ≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER SYMBOL RATING UNIT Junction to Ambient TO-220 θJA 62.5 °C/W TO-220F/TO-220F1 62.5 °C/W TO-251/TO-252 110 °C/W Junction to Case TO-220 θJC 1.0 °C/W TO-220F/TO-220F1 3.2 °C/W TO-251/TO-252 2.27 °C/W |
类似零件编号 - 6N65G-TF1-T |
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类似说明 - 6N65G-TF1-T |
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