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3N50_1109 数据表(PDF) 2 Page - Unisonic Technologies |
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3N50_1109 数据表(HTML) 2 Page - Unisonic Technologies |
2 / 6 page 3N50 Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 6 www.unisonic.com.tw QW-R502-530.b ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 500 V Gate-Source Voltage VGSS ±30 V Continuous (TC=25°C) ID 3 (Note 5) A Drain Current Pulsed (Note 2) IDM 12 (Note 5) A Avalanche Current (Note 2) IAR 3 A Single Pulsed (Note 3) EAS 200 mJ Avalanche Energy Repetitive (Note 4) EAR 6.2 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220F 25 Power Dissipation (TC=25°C) TO-252 50 W TO-220F 0.2 Derate above 25°C TO-252 PD 0.4 W/°C Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. L = 40mH, IAS = 3A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 4. ISD ≤ 3A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 5. Drain current limited by maximum junction temperature THERMAL DATA PARAMETER SYMBOL RATINGS UNIT TO-220F 62.5 Junction to Ambient TO-252 θJA 110 °C/W TO-220F 4.9 Junction to Case TO-252 θJC 2.5 °C/W |
类似零件编号 - 3N50_1109 |
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类似说明 - 3N50_1109 |
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