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2SD1802L-X-TN3-R 数据表(PDF) 2 Page - Unisonic Technologies |
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2SD1802L-X-TN3-R 数据表(HTML) 2 Page - Unisonic Technologies |
2 / 3 page 2SD1802 NPN SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw QW-R209-001.Ba ABSOLUTE MAXIMUM RATING ( TA= 25℃, unless otherwise specified ) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 6 V Collector Power Dissipation Pc 1 W TC=25℃ 15 Collector Current (DC) IC 3 A Collector Current (PULSE) ICP 6 A Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. The device is guaranteed to meet performance specification within 0℃~70℃ operating temperature range and assured by design from –20℃~85℃. ELECTRICAL CHARACTERISTICS (TA=25℃, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector Cutoff Current ICBO VCB=40V, IE =0 1 μA Emitter Cutoff Current IEBO VEB=4V, IC=0 1 μA DC Current Gain (note) hFE1 VCE=2V, IC=100mA 100 560 hFE2 VCE=2V, IC=3A 35 Gain-Bandwidth Product fT VCE=10V, IC=50mA 150 MHz Output Capacitance COB VCB=10V, f=1MHz 25 pF C-E Saturation Voltage VCE(SAT) IC= 2A, IB=100mA 0.19 0.5 V B-E Saturation Voltage VBE(SAT) IC= 2A, IB=100mA 0.94 1.2 V C-B Breakdown Voltage V(BR)CBO IC= 10μA, IE=0 60 V C-E Breakdown Voltage V(BR)CEO IC= 1mA, RBE=∞ 50 V E-B Breakdown Voltage V(BR)EBO IE= 10μA, IC=0 6 V Turn-on Time tON See test circuit 70 ns Storage Time tSTG See test circuit 650 ns Fall Time tF See test circuit 35 ns CLASSIFICATION OF hFE1 RANK R S T U RANGE 100-200 140-280 200-400 280-560 |
类似零件编号 - 2SD1802L-X-TN3-R |
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类似说明 - 2SD1802L-X-TN3-R |
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