1N70ZG-T92-K datasheet(2/7 Pages) UTC

部件名	1N70ZG-T92-K

功能描述	1.2A, 700V N-CHANNEL POWER MOSFET

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制造商	UTC [Unisonic Technologies]

网页	http://www.utc-ic.com

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1N70Z

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 7

www.unisonic.com.tw

QW-R502-723.B

ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

700

V

Gate-Source Voltage

VGSS

±20

V

Avalanche Current (Note 2)

IAR

1.2

A

Continuous Drain Current

ID

1.2

A

Pulsed Drain Current (Note 2)

IDM

4.8

A

Avalanche Energy

Single Pulsed (Note 3)

EAS

50

mJ

Repetitive (Note 2)

EAR

4.0

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

Power Dissipation

PD

3

W

Junction Temperature

TJ

+150

℃

Operating Temperature

TOPR

-55 ~ +150

℃

Storage Temperature

TSTG

-55 ~ +150

℃

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature

3. L = 60mH, IAS = 1A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

4. ISD ≤ 1.2A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

θJA

79

℃

/W

Junction to Case

θJc

29

℃

/W

ELECTRICAL CHARACTERISTICS (TC=25℃, unless otherwise specified.)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS = 0V, ID = 250μA

700

V

Drain-Source Leakage Current

IDSS

VDS = 700V, VGS = 0V

10

μA

Gate-Source Leakage Current

Forward

IGSS

VGS = 20V, VDS = 0V

+5

μA

Reverse

VGS = -20V, VDS = 0V

-5

μA

Breakdown Voltage Temperature Coefficient △BVDSS/T

△ J ID = 250μA

0.4

V/℃

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS = VGS, ID = 250μA

2.0

4.0

V

Static Drain-Source On-State Resistance

RDS(ON)

VGS = 10V, ID = 0.6A

9.3

13.5

Ω

DYNAMIC CHARACTERISTICS

Input Capacitance

CISS

VDS=25V, VGS=0V, f=1MHz

120

150

pF

Output Capacitance

COSS

20

25

pF

Reverse Transfer Capacitance

CRSS

3.0

4.0

pF

SWITCHING CHARACTERISTICS

Turn-On Delay Time

tD(ON)

VDD=350V, ID=1.2A, RG=50Ω

(Note 2,3)

5

20

ns

Turn-On Rise Time

tR

25

60

ns

Turn-Off Delay Time

tD(OFF)

7

25

ns

Turn-Off Fall Time

tF

25

60

ns

Total Gate Charge

QG

VDS=560V, VGS=10V,

ID=1.2A (Note 2,3)

5.0

6.0

nC

Gate-Source Charge

QGS

1.0

nC

Gate-Drain Charge

QGD

2.6

nC

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类似说明 - 1N70ZG-T92-K

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