AM3808NE datasheet(1/5 Pages) ANALOGPOWER

部件名	AM3808NE

功能描述	Dual N-Channel 20-V (D-S) MOSFET

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制造商	ANALOGPOWER [Analog Power]

网页	http://www.analogpowerinc.com/index.html

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Analog Power

AM3808NE

Dual N-Channel 20-V (D-S) MOSFET

VDS (V)

ID(A)

6

5

Symbol

Limit

Units

VDS

20

VGS

±8

TA=25°C

6

TA=100°C

3.6

IDM

22

IS

1

A

TA=25°C

0.83

TA=100°C

0.3

TJ, Tstg

-55 to 150

°C

Symbol

Maximum

Units

110

150

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

b.

Pulse width limited by maximum junction temperature

ID

A

Pulsed Drain Current

b

Continuous Source Current (Diode Conduction)

a

Power Dissipation

a

PD

W

Continuous Drain Current

a

Operating Junction and Storage Temperature Range

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient

a

t <= 10 sec

RθJA

°C/W

Steady State

Drain-Source Voltage

V

Gate-Source Voltage

PRODUCT SUMMARY

rDS(on) (mΩ)

20 @ VGS = 4.5V

28 @ VGS = 2.5V

ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)

Parameter

20

Key Features:

• Low rDS(on) trench technology

• Low thermal impedance

• Fast switching speed

Typical Applications:

• Battery Powered Instruments

• Portable Computing

• Mobile Phones

• GPS Units and Media Players

1

Publication Order Number:

DS_AM3808NE_1A

类似零件编号 - AM3808NE

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类似说明 - AM3808NE

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