数据搜索系统,热门电子元器件搜索 |
|
N0100P-T1-AT 数据表(PDF) 3 Page - Renesas Technology Corp |
|
N0100P-T1-AT 数据表(HTML) 3 Page - Renesas Technology Corp |
3 / 8 page The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. MOS FIELD EFFECT TRANSISTOR N0100P P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DATA SHEET Document No. D20203EJ1V0DS00 (1st edition) Date Published January 2010 NS Printed in Japan 2010 DESCRIPTION The N0100P is a switching device, which can be driven directly by a 1.8 V power source. This N0100P features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 1.8 V drive available • Low on-state resistance RDS(on)1 = 44 m Ω MAX. (VGS = −4.5 V, ID = −2.0 A) RDS(on)2 = 56 m Ω MAX. (VGS = −3.0 V, ID = −2.0 A) RDS(on)3 = 62 m Ω MAX. (VGS = −2.5 V, ID = −2.0 A) RDS(on)4 = 105 m Ω MAX. (VGS = −1.8 V, ID = −1.5 A) • Built-in gate protection diode ORDERING INFORMATION PART NUMBER LEAD PLATING PACKING PACKAGE N0100P-T1-AT Pure Sn (Tin) Tape 3000 p/reel SOT-23F Marking: XX ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS −12 V Gate to Source Voltage (VDS = 0 V) VGSS m8.0 V Drain Current (DC) ID(DC) m3.5 A Drain Current (pulse) Note1 ID(pulse) m12 A Total Power Dissipation PT1 0.2 W Total Power Dissipation Note2 PT2 1.3 W Channel Temperature Tch 150 °C Storage Temperature Tstg −55 to +150 °C Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Mounted on FR-4 board of 50 mm × 50 mm × 1.6 mm, copper foil 100%, t ≤ 5 sec. Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. PACKAGE DRAWING (Unit: mm) 2.9 ±0.1 0.85 ±0.05 0.165 ±0.05 0 to 0.025 1.9 1 2 3 0.42 ±0.05 1: Source 2: Gate 3: Drain EQUIVALENT CIRCUIT Source Body Diode Gate Protection Diode Gate Drain |
类似零件编号 - N0100P-T1-AT |
|
类似说明 - N0100P-T1-AT |
|
|
链接网址 |
隐私政策 |
ALLDATASHEETCN.COM |
ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |