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N0100P-T1-AT 数据表(PDF) 3 Page - Renesas Technology Corp

部件名 N0100P-T1-AT
功能描述  P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
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制造商  RENESAS [Renesas Technology Corp]
网页  http://www.renesas.com
标志 RENESAS - Renesas Technology Corp

N0100P-T1-AT 数据表(HTML) 3 Page - Renesas Technology Corp

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The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest
version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for
availability and additional information.
MOS FIELD EFFECT TRANSISTOR
N0100P
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DATA SHEET
Document No.
D20203EJ1V0DS00 (1st edition)
Date Published
January 2010 NS
Printed in Japan
2010
DESCRIPTION
The N0100P is a switching device, which can be driven directly by a 1.8 V
power source.
This N0100P features a low on-state resistance and excellent switching
characteristics, and is suitable for applications such as power switch of
portable machine and so on.
FEATURES
• 1.8 V drive available
• Low on-state resistance
RDS(on)1 = 44 m
Ω MAX. (VGS = −4.5 V, ID = −2.0 A)
RDS(on)2 = 56 m
Ω MAX. (VGS = −3.0 V, ID = −2.0 A)
RDS(on)3 = 62 m
Ω MAX. (VGS = −2.5 V, ID = −2.0 A)
RDS(on)4 = 105 m
Ω MAX. (VGS = −1.8 V, ID = −1.5 A)
• Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
PACKING
PACKAGE
N0100P-T1-AT
Pure Sn (Tin)
Tape 3000 p/reel
SOT-23F
Marking: XX
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
−12
V
Gate to Source Voltage (VDS = 0 V)
VGSS
m8.0
V
Drain Current (DC)
ID(DC)
m3.5
A
Drain Current (pulse)
Note1
ID(pulse)
m12
A
Total Power Dissipation
PT1
0.2
W
Total Power Dissipation
Note2
PT2
1.3
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
−55 to +150
°C
Notes 1. PW
≤ 10
μs, Duty Cycle ≤ 1%
2. Mounted on FR-4 board of 50 mm
× 50 mm × 1.6 mm, copper foil 100%, t ≤ 5 sec.
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage
may be applied to this device.
PACKAGE DRAWING (Unit: mm)
2.9
±0.1
0.85
±0.05
0.165
±0.05
0 to 0.025
1.9
1
2
3
0.42
±0.05
1: Source
2: Gate
3: Drain
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain


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