N0100P datasheet(5/8 Pages) RENESAS

部件名	N0100P

功能描述	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

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制造商	RENESAS [Renesas Technology Corp]

网页	http://www.renesas.com

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Data Sheet D20203EJ1V0DS

3

N0100P

TYPICAL CHARACTERISTICS (TA = 25°C)

DERATING FACTOR OF FORWARD BIAS

SAFE OPERATING AREA

TOTAL POWER DISSIPATION vs.

AMBIENT TEMPERATURE

0

20

40

60

80

100

120

0

25

50

75

100

125

150

175

TA - Ambient Temperature -

°C

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

0

25

50

75

100

125

150

175

Mounted on 2500 mm

2 x 35 μ m

Coper Pad Connected to

Drain Electrode, t

≤ 5 sec

TA - Ambient Temperature -

°C

FORWARD BIAS SAFE OPERATING AREA

-0.01

-0.1

-1

-10

-100

-0.1

-1

-10

-100

ID(DC) = –3.5 A

ID(pulse) = –12 A

TA = 25

°C

Single Pulse

Mounted on FR-4 board of

50 mm x 50 mm x 1.6 mm,

copper foil 50 mm x 50 mm, t

≤ 5 sec.

RD

S(

on

) L

im1

ite

d

(V

GS

= –

4.5

V)

110

0 m

1

s

110

m

1

s

11m

1

s

PW

= 3

00

μs

5 s

VDS - Drain to Source Voltage - V

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

0.1

1

10

100

1000

Mounted on FR-4 board of 50 mm x 50 mm x 1.6 mm

Mounted on 2500 mm

2 x 35 μ m

Coper Pad Connected to Drain Electrode

PW - Pulse Width - s

0.1 m

1 m

10 m

100 m

1

10

100

1000

类似零件编号 - N0100P

制造商	部件名	数据表	功能描述
VBsemi Electronics Co.,...	N0100P	463Kb / 9P	P-Channel 20-V (D-S) MOSFET
Renesas Technology Corp	N0100P	262Kb / 8P	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

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类似说明 - N0100P

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