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FP210L100-22 数据表(PDF) 2 Page - Siemens Semiconductor Group |
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FP210L100-22 数据表(HTML) 2 Page - Siemens Semiconductor Group |
2 / 5 page Semiconductor Group 2 FP 210 L 100-22 Maximum ratings Characteristics ( T A = 25 °C) Measuring arrangements By approaching a soft iron part close to the sensor a change in its resistance is obtained. The potential divider circuit of the magneto resistor causes a reduction in the temperature dependence of the output voltage V OUT. Parameter Symbol Value Unit Operating temperature T A – 40/ +140 °C Storage temperature T stg – 40/ +150 °C Power dissipation1) P tot 400 mW Supply voltage2) V IN 7.5 V Insulation voltage between terminals and casing V I > 100 V Thermal conductivity G thA ≥ 5 mW/K Nominal supply voltage V IN N 5V Total resistance, ( δ = ∞, I ≤ 1 mA) R 1-3 220 …400 Ω Center symmetry3) ( δ = ∞) M ≤ 10 % Offset voltage4) (at V IN N and δ = ∞) V 0 ≤ 130 mV Open circuit output voltage5) ( V IN N and δ = 0.2 mm) V out pp > 1000 mV Cut-off frequency f c > 20 kHz 1) Corresponding to diagram Ptot = f(TA) 2) Corresponding to diagram VIN = f(TA) 3) 4) Corresponding to measuring circuit in Fig. 2 5) Corresponding to measuring circuit in Fig. 2 and arrangement as shown in Fig. 1 M R 12 – R 23 – – ---------------------------- = × 100% for R 1-2 > R2-3 R 12 – |
类似零件编号 - FP210L100-22 |
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类似说明 - FP210L100-22 |
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