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BUZ77A 数据表(PDF) 8 Page - Siemens Semiconductor Group |
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BUZ77A 数据表(HTML) 8 Page - Siemens Semiconductor Group |
8 / 9 page Semiconductor Group 8 07/96 BUZ 77 A Avalanche energy E AS = ƒ(Tj) parameter: ID = 2.7 A, VDD = 50 V R GS = 25 Ω, L = 45.3 mH 20 40 60 80 100 120 °C 160 T j 0 20 40 60 80 100 120 140 160 mJ 190 E AS Typ. gate charge VGS = ƒ(QGate) parameter: I D puls = 4 A 0 4 8 12 16 20 24 28 nC 34 Q Gate 0 2 4 6 8 10 12 V 16 V GS DS max V 0,8 DS max V 0,2 Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) -60 -20 20 60 100 °C 160 T j 540 560 580 600 620 640 660 680 V 710 V (BR)DSS |
类似零件编号 - BUZ77A |
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类似说明 - BUZ77A |
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