BUZ71 datasheet(8/9 Pages) SIEMENS

部件名	BUZ71

功能描述	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

Download	9 Pages

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制造商	SIEMENS [Siemens Semiconductor Group]

网页	http://www.siemens.com/

标志

8 / 9 page

Semiconductor Group

8

07/96

BUZ 71

Not for new design

Avalanche energy

E

AS = ƒ(Tj)

parameter:

ID = 14 A, VDD = 25 V

RGS = 25 Ω, L = 30.6 µH

20

40

60

80

100

120

°C

160

T

j

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

mJ

6.5

E

AS

Typ. gate charge

VGS = ƒ(QGate)

parameter:

ID puls = 22 A

0

4

8

12

16

20

24

nC

30

Q

Gate

0

2

4

6

8

10

12

V

16

V

GS

DS max

V

0,8

DS max

V

0,2

Drain-source breakdown voltage

V

(BR)DSS = ƒ(Tj)

-60

-20

20

60

100

°C

160

T

j

45

46

47

48

49

50

51

52

53

54

55

56

57

V

60

V

(BR)DSS

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