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BUZ111SL 数据表(PDF) 3 Page - Siemens Semiconductor Group |
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BUZ111SL 数据表(HTML) 3 Page - Siemens Semiconductor Group |
3 / 8 page Semiconductor Group 3 28/Jan/1998 BUZ111SL SPP80N05L Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Transconductance VDS≥ 2 * ID * RDS(on)max = 2 V, ID = 80 A gfs 30 95 - S Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Ciss - 3850 4800 pF Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Coss - 1090 1357 Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Crss - 570 715 Turn-on delay time VDD = 30 V, VGS = 4.5 V, ID = 80 A RG = 1.3 Ω td(on) - 30 45 ns Rise time VDD = 30 V, VGS = 4.5 V, ID = 80 A RG = 1.3 Ω tr - 37 56 Turn-off delay time VDD = 30 V, VGS = 4.5 V, ID = 80 A RG = 1.3 Ω td(off) - 70 105 Fall time VDD = 30 V, VGS = 4.5 V, ID = 80 A RG = 1.3 Ω tf - 36 55 Gate charge at threshold VDD = 40 V, ID ≥ 0.1 A, VGS =0 to 1 V Qg(th) - 3.8 5.7 nC Gate charge at 5.0 V VDD = 40 V, ID = 80 A, VGS =0 to 5 V Qg(5) - 92 138 Gate charge total VDD = 40 V, ID = 80 A, VGS =0 to 10 V Qg(total) - 155 232 Gate plateau voltage VDD = 40 V, ID = 80 A V(plateau) - 3.4 - V |
类似零件编号 - BUZ111SL |
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类似说明 - BUZ111SL |
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