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BUZ102SL-4 数据表(PDF) 2 Page - Siemens Semiconductor Group |
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BUZ102SL-4 数据表(HTML) 2 Page - Siemens Semiconductor Group |
2 / 8 page Semiconductor Group 2 23/Oct/1997 BUZ 102SL-4 Preliminary data Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Thermal resistance, junction - soldering point 1) RthJS - - tbd K/W Thermal resistance, junction - ambient 2) RthJA - - 62.5 1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer,70µm thick) copper area for Drain connection. PCB is vertical without blown air. 2) one channel active Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = 0.25 mA, Tj = 25 °C V(BR)DSS 55 - - V Gate threshold voltage VGS=VDS, ID = 90 µA VGS(th) 1.2 1.6 2 Zero gate voltage drain current VDS = 55 V, VGS = 0 V, Tj = -40 °C VDS = 55 V, VGS = 0 V, Tj = 25 °C VDS = 55 V, VGS = 0 V, Tj = 150 °C IDSS - - - - 0.1 - 100 1 0.1 µA Gate-source leakage current VGS = 20 V, VDS = 0 V IGSS - 10 100 nA Drain-Source on-resistance VGS = 5 V, ID = 6.2 A RDS(on) - 0.025 0.033 Ω |
类似零件编号 - BUZ102SL-4 |
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类似说明 - BUZ102SL-4 |
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