SMTPA130 datasheet(2/6 Pages) BILIN

部件名	SMTPA130

功能描述	TELECOMMUNICATION PROTECTION BREAKDOWN VOLTAGE: 62 --- 270 V

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制造商	BILIN [Galaxy Semi-Conductor Holdings Limited]

网页	http://www.galaxycn.com

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2 / 6 page

V

I

I PP

I H

I RM

I BO

VRM

VBR VBO

I R

10/1000 s50

8/20μs

100

10/560μs55

5/310μs65

10/160μs75

1/20μs

100

2/10μs

150

8/20μs2.5

kA

t=20m s

30

t=16.6ms

32

t=0.2s

17

t=2s

9

t=16.6ms

8.5

t=20m s

9

-55to+150

150

260

Symbol

Value

Unlt

Rth(j-l)

20

/W

Rth(j-a)

100

/W

I H

C

min.

Note

3

typ.

Note

4

typ.

Note

5

μA

V

mA

V

mA

V

m

A

mA

pF

56

62

85

82

150

30

50

61

68

93

90

150

30

45

90

100

135

133

150

20

40

108

120

160

150

20

40

117

130

173

150

20

35

162

180

235

240

150

15

30

180

200

262

267

150

15

30

198

220

285

293

150

15

30

216

240

300

320

150

15

30

243

270

350

360

150

15

30

Symbol

VRM

IRM

VR

VBR

VBO

IH

IBO

IPP

C

Note

4: V

R=50V bias, V RMS=1V , F=1MHz.

Note

5: V

R=2V bias , V RMS=1V , F=1MHz.

2

1.0

800

SMTPA68

T68

SMTPA100

T100

SMTPA120

T120

SMTPA130

T130

SMTPA180

T180

A

THERMAL RESISTANCES

TL

Storage temperature range Maximum junction temperature

Ipp

Repetitive peak pulse current

STATIC

VBO @ IBO

max.

Note

2

Parameter

Junction to leads

Junction to ambient with recom mended footprint

DYNAMIC VBO

@ I BO

max.

Note

1

ABSOLUTE MAXIMUM RATINGS (TA=25 )

Parameter

Symbol

Unit

Value

A

IFSM

IFS

Tstg

Tj

Storage temperature range

Maxim um

junction temperature

Fail safe mode: maximum current

Non repetitive surge peak on-state current (Sinusoidal)

I2t

I2t vallue for fusing

A2s

IR @ VR

max.

SMTPA200

T200

SMTPA220

T220

SMTPA62

T62

Type

IRM @ VRM

max.

SMTPA240

T240

SMTPA270

T270

ELECTRICAL CHARACTERISTICS (TA=25

)

Leakage current at stand-off voltage

Capacitance

Parameter

Stand-off voltage

SMTPAxxx

GALAXY ELECTRICAL

Note : See functional break over voltage test circuit 1.

Note

2: See test circuit2.

Note

3: See functional holding current test circuit 3.

Break over voltage

Holding current

Break over current

Peak pulse current

Continuous

reverse voltage

Break

down voltage

BLGALAXY ELECTRICAL

Document Number 0286002

2.

www.galaxycn.com

BL

1

Device

Marking

Code

类似零件编号 - SMTPA130

制造商	部件名	数据表	功能描述
STMicroelectronics	SMTPA130	61Kb / 5P	TRISILETM
	SMTPA130	106Kb / 10P	TRISIL FOR TELECOM EQUIPMENT PROTECTION
	SMTPA130	129Kb / 11P	Trisil for telecom equipment protection
Frontier Electronics.	SMTPA130	123Kb / 4P	TELECOM EQUIPMENT PROTECTION竊숿RISILTM
Shenzhen Luguang Electr...	SMTPA130	529Kb / 6P	Telecommunication Protection

More results

类似说明 - SMTPA130

制造商	部件名	数据表	功能描述
Galaxy Semi-Conductor H...	SMTPB	281Kb / 4P	TELECOMMUNICATION PROTECTION BREAKDOWN VOLTAGE: 62 --- 270 V
Shenzhen Taychipst Elec...	SMTPB62	18Mb / 2P	TELECOMMUNICATION PROTECTION
Galaxy Semi-Conductor H...	TPA	119Kb / 4P	TELECOMMUNICATION PROTECTION
Shenzhen Luguang Electr...	SMTPA68	529Kb / 6P	Telecommunication Protection
Shenzhen Luguang Electr...	TPA62	2Mb / 4P	Telecommunication Protection
Shenzhen Taychipst Elec...	TPA	1Mb / 2P	TELECOMMUNICATION PROTECTION ARRESTORS
Sangdest Microelectroni...	SMCJ200CA	199Kb / 5P	Breakdown voltage range: 220 V
Nais(Matsushita Electri...	DSBT	75Kb / 3P	4,000 V BREAKDOWN VOLTAGE DS RELAYS
Chongqing Pingwei Enter...	STPA62	34Kb / 1P	SOLID STATE TELECOMMUNICATION PROTECTION ARRESTOR
STMicroelectronics	SMP-0SCMC	86Kb / 7P	Trisil for telecommunication equipment protection