BC856T SERIES

BC857T SERIES

SURFACE MOUNT

PNP SILICON TRANSISTOR

DESCRIPTION:

The CENTRAL SEMICONDUCTOR BC856T and

BC857T Series types are PNP Silicon Transistors

manufactured by the epitaxial planar process, epoxy

molded in a surface mount package, designed for

general purpose switching and amplifier applications.

MARKING CODE: SEE MARKING CODE TABLE

ON FOLLOWING PAGE

MAXIMUM RATINGS: (TA=25°C)

SYMBOL

BC857T

BC856T

UNITS

Collector-Base Voltage

VCBO

50

80

V

Collector-Emitter Voltage

VCEO

45

65

V

Emitter-Base Voltage

VEBO

5.0

V

Continuous Collector Current

IC

100

mA

Peak Collector Current

ICM

200

mA

Peak Base Current

IBM

100

mA

Power Dissipation

PD

250

mW

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

Thermal Resistance

ΘJA

500

°C/W

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

ICBO

VCB=30V

15

nA

ICBO

VCB=30V, TA=150°C

5.0

μA

IEBO

VEB=5.0V

100

nA

BVCBO

IC=10μA (BC857T)

50

V

BVCBO

IC=10μA (BC856T)

80

V

BVCEO

IC=10mA (BC857T)

45

V

BVCEO

IC=10mA (BC856T)

65

V

BVEBO

IE=10μA

5.0

V

VCE(SAT)

IC=10mA, IB=0.5mA

0.20

V

VCE(SAT)

IC=100mA, IB=5.0mA

0.40

V

VBE(ON)

IC=2.0mA, VCE=5.0V

0.58

0.70

V

VBE(ON)

IC=10mA, VCE=5.0V

0.77

V

fT

VCE=5.0V, IC=10mA, f=100MHz

100

MHz

Cc

VCB=10V, IE=0, f=1.0MHz

2.5

pF

Ce

VEB=0.5V, IC=0, f=1.0MHz

10

pF

NF

VCE=5.0V, IC=200μA,

RS=2.0KΩ, f=1.0KHz, BW=200Hz

10

dB

BC856AT

BC856BT

BC857AT

BC857BT

BC857CT

MIN

MAX

MIN

MAX

MIN

MAX

hFE

VCE=5.0V, IC=2.0mA

125

250

220

475

420

800

SOT-523 CASE

R1 (20-November 2009)

www.centra lsemi.com