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BAS16-V 数据表(PDF) 2 Page - Vishay Siliconix |
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BAS16-V 数据表(HTML) 2 Page - Vishay Siliconix |
2 / 4 page www.vishay.com 2 Document Number 85539 Rev. 1.6, 12-Aug-10 BAS16-V Vishay Semiconductors For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Thermal Characteristics Tamb = 25 °C, unless otherwise specified Electrical Characteristics Tamb = 25 °C, unless otherwise specified Typical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Symbol Value Unit Junction ambient On ceramic substrate 8 mm x 10 mm x 0.7 mm RthJA 357 K/W Junction and storage temperature range Tj = Tstg - 55 to + 150 °C Parameter Test condition Symbol Min. Typ. Max. Unit Forward voltage IF = 1 mA VF 715 mV IF = 10 mA VF 855 mV IF = 50 mA VF 1V IF = 150 mA VF 1.25 V Reverse current VR = 75 V IR 1µA VR = 75 V, Tj = 150 °C IR 50 µA VR = 25 V, Tj = 150 °C IR 30 µA Diode capacitance VR = 0, f = 1 MHz CD 4pF Reverse recovery time IF = 10 mA to IR = 1 mA, VR = 6 V, RL = 100 Ω trr 6ns Figure 1. Forward Current vs. Forward Voltage 0.01 0.1 1 10 100 1000 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VF - Forward Voltage (V) 14356 Tj = 100 °C 25 °C Figure 2. Reverse Current vs. Junction Temperature 1 10 100 1000 10000 0 25 50 75 100 125 150 175 200 Tj –Junction Temperature (°C) 14357 VR =20 V |
类似零件编号 - BAS16-V_12 |
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类似说明 - BAS16-V_12 |
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