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TS8542VA-SF-F 数据表(PDF) 2 Page - Vishay Siliconix

部件名 TS8542VA-SF-F
功能描述  Specification of High Power IR Emitting Diode Chip
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制造商  VISHAY [Vishay Siliconix]
网页  http://www.vishay.com
标志 VISHAY - Vishay Siliconix

TS8542VA-SF-F 数据表(HTML) 2 Page - Vishay Siliconix

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TS8542VA
www.vishay.com
Vishay Semiconductors
Rev. 1.1, 20-Feb-12
2
Document Number: 83474
For technical questions, contact: optochipsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1) The measurements are based on samples of die which are mounted on a TO-18 gold header without resin coating
(2) The radiant intensity, Ie, is measured on the geometric axis of the TO-18 header
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 1 - Relative Spectral Emission
φe rel = f (λ)
Fig. 2 - Radiant Characteristics
Irel = f(
ϕ)
Note
• All chips are checked in accordance with the Vishay Semiconductor, specification of visual inspection FVOV6870.
The visual inspection shall be made in accordance with the “specification of visual inspection as referenced”. The visual inspection of chip
backside is performed with stereo microscope with incident light and 40x to 80x magnification.
The quality inspection (final visual inspection) is performed by production. An additional visual inspection step as special release procedure
by QM is not installed.
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
Forward voltage
IF = 100 mA
VF
1.3
1.5
V
IF = 1 A
VF
2.0
2.5
V
Radiant power (1)
IF = 100 mA
φe
32
mW
IF = 1000 mA
φe
350
mW
Radiant intensity (2)
IF = 100 mA
Ie
7.5
mW/sr
Reverse voltage
IR = 10 μA
VR
10
V
Angle of half intensity
IF = 100 mA
ϕ
50
55
60
deg
Peak wavelength
IF = 1 A
λp
830
850
870
nm
Spectral bandwidth
IF = 1 A
λ0.5
30
nm
Rise time/fall time
IF = 1 A, RL = 50
Ω
tr, tf
15
ns
λ- Wavelength (nm)
21776
0
0.25
0.5
0.75
1
650
750
850
950
0.4
0.2
0
94 8013
0.6
0.9
0.8
30°
10°
20°
40°
50°
60°
70°
80°
0.7
1.0
MECHANICAL DIMENSIONS
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
Length of chip edge (x-direction)
Lx
1.066
mm
Length of chip edge (y-direction)
Ly
1.066
mm
Die height
H
0.17
mm
Diameter of bondpad
d
0.127
mm
ADDITIONAL INFORMATION
Frontside metallization, anode
Gold alloy
Backside metallization, cathode
Gold alloy
Dicing
Sawing
Die bonding technology
Epoxy bonding


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