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2SK3018 数据表(PDF) 1 Page - Shenzhen Jin Yu Semiconductor Co., Ltd. |
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2SK3018 数据表(HTML) 1 Page - Shenzhen Jin Yu Semiconductor Co., Ltd. |
1 / 4 page 2SK3018 • Features • External dimensions 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Easily designed drive circuits. 5) Easy to parallel. • Applications Interfacing, switching (30V, 100mA) • Structure Silicon N-channel MOSFET ①. Gate ②. Source ③. Drain • Absolute maximum ratings (Ta = 25°C) • Equivalent circuit Parameter Symbol Limits Unit Drain-source voltage VDSS 30 V Gate-source voltage VGSS 20 V Continuous ID 100 mA Drain current Pulsed IDP*1 200 mA Continuous IDR 100 mA Reverse drain current Pulsed IDRP*1 200 mA Total power dissipation(Tc=25°C) PD*2 200 mW Channel temperature Tch 150 °C Storage temperature Tstg -55~+150 °C *1Pw≤10µs,Duty Cycle≤50% *2With each pin mounted on the recommended lands ① ② ③ Units:mm ① ② ③ SOT-23 SOT-323 *A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use a protection circuit when the fixed voltages are exceeded. Gate Drain Source *Gate Protection Diode N-Channel Enhancement Mode MOSFET 1 Date:2011/05 www.htsemi.com semiconductor JinYu |
类似零件编号 - 2SK3018 |
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类似说明 - 2SK3018 |
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