2SC4374 datasheet(1/1 Pages) HTSEMI

部件名	2SC4374

功能描述	TRANSISTOR (NPN)

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制造商	HTSEMI [Shenzhen Jin Yu Semiconductor Co., Ltd.]

网页	http://www.htsemi.com

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SOT-89-3L

1. BASE

2. COLLECTOR

3. EMITTER

TRANSISTOR (NPN)

FEATURES

Small Flat Package

Low Collector- Emitter Saturation Voltage

MAXIMUM RATINGS (Ta=25

℃ unless otherwise noted)

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC=1mA,IE=0

80

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=10mA,IB=0

80

V

Emitter-base breakdown voltage

V(BR)EBO

IE=1mA,IC=0

5

V

Collector cut-off current

ICBO

VCB=80V,IE=0

0.1

µA

Emitter cut-off current

IEBO

VEB=5V,IC=0

0.1

µA

hFE(1)

VCE=2V, IC=50mA

70

240

DC current gain

hFE(2)

VCE=2V, IC=200mA

50

Collector-emitter saturation voltage

VCE(sat)

IC=200mA,IB=20mA

0.4

V

Base-emitter voltage

VBE

VCE=2V, IC=5mA

0.55

0.8

V

Transition frequency

fT

VCE=10V,IC=10mA

100

MHz

Collector output capacitance

Cob

VCB=10V, IE=0, f=1MHz

10

pF

CLASSIFICATION OF hFE（1）

RANK

O

Y

RANGE

70–140

120–240

MARKING

EO

EY

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

80

V

VCEO

Collector-Emitter Voltage

80

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current

400

mA

PC

Collector Power Dissipation

500

mW

RθJA

Thermal Resistance From Junction To Ambient

250

℃/W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature

-55~+150

℃

１　

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2SC4374

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