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PSMN5R0-100PS 数据表(PDF) 1 Page - NXP Semiconductors

部件名 PSMN5R0-100PS
功能描述  N-channel 100 V 5 m廓 standard level MOSFET in TO-220
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制造商  PHILIPS [NXP Semiconductors]
网页  http://www.nxp.com
标志 PHILIPS - NXP Semiconductors

PSMN5R0-100PS 数据表(HTML) 1 Page - NXP Semiconductors

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1.
Product profile
1.1 General description
Standard level N-channel MOSFET in a TO-220 package qualified to 175 °C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
1.2 Features and benefits
High efficiency due to low switching
and conduction losses
Suitable for standard level gate drive
sources
1.3 Applications
DC-to-DC converters
Load switching
Motor control
Server power supplies
1.4 Quick reference data
PSMN5R0-100PS
N-channel 100 V 5 m
Ω standard level MOSFET in TO-220
Rev. 3 — 26 September 2011
Product data sheet
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
Tj ≥ 25 °C; Tj ≤ 175 °C
-
-
100
V
ID
drain current
Tmb =25°C; VGS =10V;
see Figure 1
[1]
--120
A
Ptot
total power dissipation
Tmb =25°C; see Figure 2
--338
W
Tj
junction temperature
-55
-
175
°C
Static characteristics
RDSon
drain-source on-state
resistance
VGS =10V; ID =25A;
Tj = 100 °C; see Figure 12;
see Figure 13
-7.7
9
m
VGS =10V; ID =25A;
Tj =25 °C; see Figure 13
[2]
-4.3
5
m
Dynamic characteristics
QGD
gate-drain charge
VGS =10V; ID =75A;
VDS = 50 V; see Figure 14;
see Figure 15
-49
-nC
QG(tot)
total gate charge
-
170
-
nC
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source avalanche
energy
VGS =10V; Tj(init) =25°C;
ID = 120 A; Vsup ≤ 100 V;
RGS =50 Ω; Unclamped
--537
mJ


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