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SS2PH9HM3-84A 数据表(PDF) 1 Page - Vishay Siliconix |
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SS2PH9HM3-84A 数据表(HTML) 1 Page - Vishay Siliconix |
1 / 4 page Document Number: 84682 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 30-May-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 High Voltage Surface Mount Schottky Barrier Rectifier High Barrier Technology for Improved High Temperature Performance SS2PH9, SS2PH10 Vishay General Semiconductor New Product TYPICAL APPLICATIONS For use in high frequency inverters, freewheeling, DC/DC converters and polarity protection applications. FEATURES • Very low profile - typical height of 1.0 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Case: DO-220AA (SMP) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS compliant, and automotive grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes the cathode end PRIMARY CHARACTERISTICS IF(AV) 2.0 A VRRM 90 V, 100 V IFSM 50 A EAS 11.25 mJ VF at IF = 1.0 A 0.62 V IR max. 1.0 μA TJ max. 175 °C DO-220AA (SMP) eSMP ® Series MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL SS2PH9 SS2PH10 UNIT Device marking code 29 210 Maximum repetitive peak reverse voltage VRRM 90 100 V Maximum average forward rectified current (fig. 1) IF(AV) 2.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 50 A Non-repetitive avalanche energy at TJ = 25 °C, IAS = 1.5 A, L = 10 mH EAS 11.25 mJ Voltage rate of change (rated VR) dV/dt 10 000 V/μs Operating junction and storage temperature range TJ, TSTG - 55 to + 175 °C |
类似零件编号 - SS2PH9HM3-84A |
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类似说明 - SS2PH9HM3-84A |
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