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SIZ710DT-T1-GE3 数据表(PDF) 1 Page - Vishay Siliconix |
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SIZ710DT-T1-GE3 数据表(HTML) 1 Page - Vishay Siliconix |
1 / 14 page Vishay Siliconix SiZ710DT New Product Document Number: 65733 S10-2248-Rev. A, 04-Oct-10 www.vishay.com 1 N-Channel 20 V (D-S) MOSFETs Ordering Information: SiZ710DT-T1-GE3 (Lead (Pb)-free and Halogen-free) G1 G2 S2 S2 D1 D1 1 6 5 4 2 3 3.73 mm 6.00 mm PowerPAIR® 6 x 3.7 D1 S1/D2 Pin 1 GHS GLS GND GND VIN VIN 1 6 5 4 2 3 VIN VSW VIN/D1 GND/S2 N-Channel 2 MOSFET N-Channel 1 MOSFET GHS/G1 VSW/S1/D2 GLS/G2 Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/ppg?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 67 °C/W for channel-1 and 65 °C/W for channel-2. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Channel-1 Channel-2 Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 16a 35a A TC = 70 °C 16a 35a TA = 25 °C 16a, b, c 30b, c TA = 70 °C 15b, c 24b, c Pulsed Drain Current IDM 70 100 Continuous Source Drain Diode Current TC = 25 °C IS 16a 35a TA = 25 °C 3.2b, c 3.8b, c Single Pulse Avalanche Current L = 0.1 mH IAS 20 30 Single Pulse Avalanche Energy EAS 20 45 mJ Maximum Power Dissipation TC = 25 °C PD 27 48 W TC = 70 °C 17 31 TA = 25 °C 3.9b, c 4.6b, c TA = 70 °C 2.5b, c 3b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature)d, e 260 THERMAL RESISTANCE RATINGS Parameter Symbol Channel-1 Channel-2 Unit Typ. Max. Typ. Max. Maximum Junction-to-Ambientb, f t 10 s RthJA 24 32 20 27 °C/W Maximum Junction-to-Case (Drain) Steady State RthJC 3.5 4.6 2 2.6 PRODUCT SUMMARY VDS (V) RDS(on) ()ID (A) Qg (Typ.) Channel-1 20 0.0068 at VGS = 10 V 16a 6.9 nC 0.009 at VGS = 4.5 V 16a Channel-2 20 0.0033 at VGS = 10 V 35a 18.2 nC 0.0043 at VGS = 4.5 V 35a FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Notebook System Power • POL • Synchronous Buck Converter |
类似零件编号 - SIZ710DT-T1-GE3 |
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类似说明 - SIZ710DT-T1-GE3 |
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