SI8429DB datasheet(2/4 Pages) VISHAY

部件名	SI8429DB

功能描述	P-Channel 1.2V (G-S) MOSFET

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制造商	VISHAY [Vishay Siliconix]

网页	http://www.vishay.com

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Vishay Siliconix

SPICE Device Model Si8429DB

SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Simulated

Data

Measured

Data

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = −250 µA

0.60

V

Drain-Source On-State Resistance

a

rDS(on)

VGS = −4.5 V, ID = −1 A

0.031

0.029

A

VGS = −2.5 V, ID = −1 A

0.036

0.035

VGS = −1.8 V, ID = −1 A

0.043

VGS = −1.5 V, ID = −1 A

0.049

0.051

Drain-Source On-State Resistance

a

rDS(on)

VGS = −1.2 V, ID = −1 A

0.066

0.065

Ω

Forward Transconductance

a

gfs

VDS = −4 V, ID = −1 A

10

S

Diode Forward Voltage

a

VSD

IS = −1 A, VGS = 0 V

− 0.60

− 0.70

V

Dynamic

b

Input Capacitance

Ciss

1793

1640

Output Capacitance

Coss

588

590

Reverse Transfer Capacitance

Crss

VDS = −4 V, VGS = 0 V, f = 1 MHz

379

380

pF

VDS = −4 V, VGS = −5 V, ID = −1 A

18

24

Total Gate Charge

Qg

16

21

Gate-Source Charge

Qgs

1.8

Gate-Drain Charge

Qgd

VDS = −4 V, VGS = −4.5 V, ID = −1 A

3.7

nC

Notes

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2%.

b. Guaranteed by design, not subject to production testing.

2

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Document Number: 69660

S-80009

Rev. A, 21-Jan-08

类似零件编号 - SI8429DB

制造商	部件名	数据表	功能描述
Vishay Siliconix	SI8429DB	240Kb / 10P	P-Channel 1.2 V (G-S) MOSFET 01-Jan-2022
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	SI8429DB	240Kb / 10P	P-Channel 1.2 V (G-S) MOSFET 01-Jan-2022

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