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SI7980DP 数据表(PDF) 3 Page - Vishay Siliconix

部件名 SI7980DP
功能描述  Dual N-Channel 20-V (D-S) MOSFET with Schottky Diode
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制造商  VISHAY [Vishay Siliconix]
网页  http://www.vishay.com
标志 VISHAY - Vishay Siliconix

SI7980DP 数据表(HTML) 3 Page - Vishay Siliconix

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Document Number: 68391
S-83039-Rev. C, 29-Dec-08
www.vishay.com
3
Vishay Siliconix
Si7980DP
Notes:
a. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.a
Max.
Unit
Dynamica
Total Gate Charge
Qg
VDS = 10 V, VGS = 10 V, ID = 5 A
Ch-1
17.5
27
nC
VDS = 10 V, VGS = 10 V, ID = 5 A
Ch-2
22.5
34
Channel-1
VDS = 10 V, VGS = 4.5 V, ID = 5 A
Channel-2
VDS = 10 V, VGS = 4.5 V, ID = 5 A
Ch-1
8
12
Ch-2
10.3
16
Gate-Source Charge
Qgs
Ch-1
2.5
Ch-2
3.4
Gate-Drain Charge
Qgd
Ch-1
2.1
Ch-2
2.6
Gate Resistance
Rg
f = 1 MHz
Ch-1
0.2
1.1
2.2
Ω
Ch-2
0.2
1.3
2.6
Turn-On Delay Time
td(on)
Channel-1
VDD = 10 V, RL = 2 Ω
ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω
Channel-2
VDD = 10 V, RL = 2 Ω
ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω
Ch-1
9
18
ns
Ch-2
13
25
Rise Time
tr
Ch-1
16
30
Ch-2
16
30
Turn-Off Delay Time
td(off)
Ch-1
20
35
Ch-2
24
45
Fall Time
tf
Ch-1
9
18
Ch-2
8
16
Turn-On Delay Time
td(on)
Channel-1
VDD = 10 V, RL = 2 Ω
ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω
Channel-2
VDD = 10 V, RL = 2 Ω
ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω
Ch-1
15
30
Ch-2
18
35
Rise Time
tr
Ch-1
18
35
Ch-2
18
35
Turn-Off Delay Time
td(off)
Ch-1
20
40
Ch-2
25
45
Fall Time
tf
Ch-1
12
24
Ch-2
10
20
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
Ch-1
8
A
Ch-2
8
Pulse Diode Forward Currenta
ISM
Ch-1
30
Ch-2
30
Body Diode Voltage
VSD
IS = 2 A
Ch-1
0.73
1.1
V
IS = 1 A
Ch-2
0.37
0.43
Body Diode Reverse Recovery Time
trr
Channel-1
IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C
Channel-2
IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C
Ch-1
16
32
ns
Ch-2
20
40
Body Diode Reverse Recovery Charge
Qrr
Ch-1
8
16
nC
Ch-2
10
20
Reverse Recovery Fall Time
ta
Ch-1
8
ns
Ch-2
9
Reverse Recovery Rise Time
tb
Ch-1
8
Ch-2
11


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