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SI7980DP 数据表(PDF) 3 Page - Vishay Siliconix |
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SI7980DP 数据表(HTML) 3 Page - Vishay Siliconix |
3 / 18 page Document Number: 68391 S-83039-Rev. C, 29-Dec-08 www.vishay.com 3 Vishay Siliconix Si7980DP Notes: a. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ.a Max. Unit Dynamica Total Gate Charge Qg VDS = 10 V, VGS = 10 V, ID = 5 A Ch-1 17.5 27 nC VDS = 10 V, VGS = 10 V, ID = 5 A Ch-2 22.5 34 Channel-1 VDS = 10 V, VGS = 4.5 V, ID = 5 A Channel-2 VDS = 10 V, VGS = 4.5 V, ID = 5 A Ch-1 8 12 Ch-2 10.3 16 Gate-Source Charge Qgs Ch-1 2.5 Ch-2 3.4 Gate-Drain Charge Qgd Ch-1 2.1 Ch-2 2.6 Gate Resistance Rg f = 1 MHz Ch-1 0.2 1.1 2.2 Ω Ch-2 0.2 1.3 2.6 Turn-On Delay Time td(on) Channel-1 VDD = 10 V, RL = 2 Ω ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω Channel-2 VDD = 10 V, RL = 2 Ω ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω Ch-1 9 18 ns Ch-2 13 25 Rise Time tr Ch-1 16 30 Ch-2 16 30 Turn-Off Delay Time td(off) Ch-1 20 35 Ch-2 24 45 Fall Time tf Ch-1 9 18 Ch-2 8 16 Turn-On Delay Time td(on) Channel-1 VDD = 10 V, RL = 2 Ω ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω Channel-2 VDD = 10 V, RL = 2 Ω ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω Ch-1 15 30 Ch-2 18 35 Rise Time tr Ch-1 18 35 Ch-2 18 35 Turn-Off Delay Time td(off) Ch-1 20 40 Ch-2 25 45 Fall Time tf Ch-1 12 24 Ch-2 10 20 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C Ch-1 8 A Ch-2 8 Pulse Diode Forward Currenta ISM Ch-1 30 Ch-2 30 Body Diode Voltage VSD IS = 2 A Ch-1 0.73 1.1 V IS = 1 A Ch-2 0.37 0.43 Body Diode Reverse Recovery Time trr Channel-1 IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C Channel-2 IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C Ch-1 16 32 ns Ch-2 20 40 Body Diode Reverse Recovery Charge Qrr Ch-1 8 16 nC Ch-2 10 20 Reverse Recovery Fall Time ta Ch-1 8 ns Ch-2 9 Reverse Recovery Rise Time tb Ch-1 8 Ch-2 11 |
类似零件编号 - SI7980DP |
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类似说明 - SI7980DP |
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