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SI6562CDQ-T1-GE3 数据表(PDF) 7 Page - Vishay Siliconix |
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SI6562CDQ-T1-GE3 数据表(HTML) 7 Page - Vishay Siliconix |
7 / 17 page Document Number: 68954 S-82575-Rev. A, 27-Oct-08 www.vishay.com 7 Vishay Siliconix Si6562CDQ New Product N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Thermal Transient Impedance, Junction-to-Ambient 0.2 0.1 t1 t2 Notes: PDM 1. Duty Cycle, D = 2. Per Unit Base = RthJA =145 °C/W 3. TJM -- TA =PDMZthJA(t) t1 t2 4. Surface Mounted Duty Cycle = 0.5 Single Pulse 0.02 0.05 10-3 10-2 1 10 1000 10-1 10-4 100 Square WavePulse Duration (s) 0.1 0.01 1 Normalized Thermal Transient Impedance, Junction-to-Foot 10-3 10-2 0 1 1 10-1 10-4 0.2 0.1 Duty Cycle = 0.5 Square WavePulse Duration (s) 1 0.1 0.01 0.05 0.02 Single Pulse |
类似零件编号 - SI6562CDQ-T1-GE3 |
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类似说明 - SI6562CDQ-T1-GE3 |
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