SI5456DU-T1-GE3 datasheet(3/10 Pages) VISHAY

部件名	SI5456DU-T1-GE3

功能描述	N-Channel 20-V (D-S) MOSFET

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制造商	VISHAY [Vishay Siliconix]

网页	http://www.vishay.com

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3 / 10 page

Document Number: 64800

S09-0665-Rev. A, 20-Apr-09

www.vishay.com

3

Vishay Siliconix

Si5456DU

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

VDS - Drain-to-Source Voltage (V)

0

10

20

30

40

50

0.0

0.5

1.0

1.5

2.0

2.5

3.0

VGS =10 V thru 4 V

VGS =2 V

VGS =3 V

0.000

0.004

0.008

0.012

0.016

0.020

0

10203040

50

VGS =10 V

VGS =4.5 V

ID - Drain Current (A)

0

2

4

6

8

10

04

8

12

16

20

ID =14A

VDS =16 V

VDS =5 V

VDS =10 V

Qg - Total Gate Charge (nC)

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

4

8

12

16

20

0.0

0.5

1.0

1.5

2.0

2.5

3.0

TC = 25 °C

TC = 125 °C

TC = - 55 °C

VGS - Gate-to-Source Voltage (V)

Crss

0

300

600

900

1200

1500

0

5

10

15

20

Ciss

Coss

VDS - Drain-to-Source Voltage (V)

0.6

0.8

1.0

1.2

1.4

1.6

- 50

- 25

0

25

50

75

100

125

150

ID =9.3 A

VGS =4.5 V

VGS =10 V

TJ -Junction Temperature (°C)

类似零件编号 - SI5456DU-T1-GE3

制造商	部件名	数据表	功能描述
Silicon Laboratories	SI545	885Kb / 16P	Ultra low jitter: 80 fs Typ RMS
Skyworks Solutions Inc.	SI545	923Kb / 21P	Ultra Low Jitter Any-Frequency XO (80 fs), 0.2 to 1500 MHz Revision 206613A May, 2023
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More results

类似说明 - SI5456DU-T1-GE3

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