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SI5402BDC 数据表(PDF) 2 Page - Vishay Siliconix

部件名 SI5402BDC
功能描述  N-Channel 30-V (D-S) MOSFET
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制造商  VISHAY [Vishay Siliconix]
网页  http://www.vishay.com
标志 VISHAY - Vishay Siliconix

SI5402BDC 数据表(HTML) 2 Page - Vishay Siliconix

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Document Number: 73051
S-83054-Rev. B, 29-Dec-08
Vishay Siliconix
Si5402BDC
Notes:
a. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS TJ = 25 °C, unless otherwise noted
SPECIFICATIONS
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
1.0
3.0
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V
1
µA
VDS = 30 V, VGS = 0 V, TJ = 85 °C
5
On-State Drain Currenta
ID(on)
VDS ≥ 5 V, VGS = 10 V
20
A
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V, ID = 4.9 A
0.029
0.035
Ω
VGS = 4.5 V, ID = 4.4 A
0.035
0.042
Forward Transconductancea
gfs
VDS = 10 V, ID = 4.9 A
19
S
Diode Forward Voltagea
VSD
IS = 1.1 A, VGS = 0 V
0.8
1.2
V
Dynamicb
Total Gate Charge
Qg
VDS = 15 V, VGS = 10 V, ID = 4.9 A
10
20
nC
Gate-Source Charge
Qgs
1.9
Gate-Drain Charge
Qgd
1.6
Gate Resistance
Rg
f = 1 MHz
14
Ω
Turn-On Delay Time
td(on)
VDD = 15 V, RL = 15 Ω
ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω
10
15
ns
Rise Time
tr
10
15
Turn-Off Delay Time
td(off)
27
40
Fall Time
tf
10
15
Source-Drain Reverse Recovery Time
trr
IF = 1.1 A, dI/dt = 100 A/µs
20
60
Output Characteristics
0
4
8
12
16
20
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VGS = 10 thru 4 V
3 V
VDS - Drain-to-Source Voltage (V)
Transfer Characteristics
0
4
8
12
16
20
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
TC = 125 °C
- 55 °C
25 °C
VGS - Gate-to-Source Voltage (V)


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