SI4904DY datasheet(2/10 Pages) VISHAY

部件名	SI4904DY

功能描述	Dual N-Channel 40-V MOSFET

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制造商	VISHAY [Vishay Siliconix]

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Document Number: 73793

S09-0540-Rev. C, 06-Apr-09

Vishay Siliconix

Si4904DY

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 µA

40

V

VDS Temperature Coefficient

ΔV

DS/TJ

ID = 250 µA

40

mV/°C

VGS(th) Temperature Coefficient

ΔV

GS(th)/TJ

ID = 250 µA

- 4.8

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID= 250 µA

0.8

2.0

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 16 V

100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 40 V, VGS = 0 V

1

µA

VDS = 40 V, VGS = 0 V, TJ = 55 °C

10

On-State Drain Currentb

ID(on)

VDS = 5 V, VGS = 10 V

20

A

Drain-Source On-State Resistanceb

RDS(on)

VGS = 10 V, ID = 5 A

0.013

0.016

Ω

VGS = 4.5 V, ID = 4 A

0.015

0.019

Forward Transconductanceb

gfs

VDS = 15 V, ID = 5 A

23

S

Dynamica

Input Capacitance

Ciss

N-Channel

VDS = 20 V, VGS = 0 V, ID = 1 MHz

2390

pF

Output Capacitance

Coss

270

Reverse Transfer Capacitance

Crss

165

Total Gate Charge

Qg

VDS = 20 V, VGS = 10 V, ID = 5 A

56

85

nC

N-Channel

VDS = 20 V, VGS = 4.5 V, ID = 5 A

26

40

Gate-Source Charge

Qgs

5.5

Gate-Drain Charge

Qgd

9.7

Gate Resistance

Rg

f = 1 MHz

2.6

4.0

Turn-On Delay Time

td(on)

N-Channel

VDD = 20 V, RL = 4 Ω

ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω

15

23

ns

Rise Time

tr

20

30

Turn-Off Delay Time

td(off)

56

85

Fall Time

tf

10

15

Turn-On Delay Time

td(on)

N-Channel

VDD = 20 V, RL =4 Ω

ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω

88

135

Rise Time

tr

117

180

Turn-Off Delay Time

td(off)

62

95

Fall Time

tf

19

30

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

IS

TC = 25 °C

2.7

A

Pulse Diode Forward Currenta

ISM

20

Body Diode Voltage

VSD

IS = 1.5 A

0.69

1.2

V

Body Diode Reverse Recovery Time

trr

N-Channel

IF = 2 A, dI/dt = 100 A/µs, TJ = 25 °C

62

95

ns

Body Diode Reverse Recovery Charge

Qrr

62

95

nC

Reverse Recovery Fall Time

ta

26

nS

Reverse Recovery Rise Time

tb

36

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类似说明 - SI4904DY

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