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SI4904DY 数据表(PDF) 2 Page - Vishay Siliconix |
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SI4904DY 数据表(HTML) 2 Page - Vishay Siliconix |
2 / 10 page www.vishay.com 2 Document Number: 73793 S09-0540-Rev. C, 06-Apr-09 Vishay Siliconix Si4904DY Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 40 V VDS Temperature Coefficient ΔV DS/TJ ID = 250 µA 40 mV/°C VGS(th) Temperature Coefficient ΔV GS(th)/TJ ID = 250 µA - 4.8 Gate Threshold Voltage VGS(th) VDS = VGS, ID= 250 µA 0.8 2.0 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 16 V 100 nA Zero Gate Voltage Drain Current IDSS VDS = 40 V, VGS = 0 V 1 µA VDS = 40 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currentb ID(on) VDS = 5 V, VGS = 10 V 20 A Drain-Source On-State Resistanceb RDS(on) VGS = 10 V, ID = 5 A 0.013 0.016 Ω VGS = 4.5 V, ID = 4 A 0.015 0.019 Forward Transconductanceb gfs VDS = 15 V, ID = 5 A 23 S Dynamica Input Capacitance Ciss N-Channel VDS = 20 V, VGS = 0 V, ID = 1 MHz 2390 pF Output Capacitance Coss 270 Reverse Transfer Capacitance Crss 165 Total Gate Charge Qg VDS = 20 V, VGS = 10 V, ID = 5 A 56 85 nC N-Channel VDS = 20 V, VGS = 4.5 V, ID = 5 A 26 40 Gate-Source Charge Qgs 5.5 Gate-Drain Charge Qgd 9.7 Gate Resistance Rg f = 1 MHz 2.6 4.0 Turn-On Delay Time td(on) N-Channel VDD = 20 V, RL = 4 Ω ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω 15 23 ns Rise Time tr 20 30 Turn-Off Delay Time td(off) 56 85 Fall Time tf 10 15 Turn-On Delay Time td(on) N-Channel VDD = 20 V, RL =4 Ω ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω 88 135 Rise Time tr 117 180 Turn-Off Delay Time td(off) 62 95 Fall Time tf 19 30 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C 2.7 A Pulse Diode Forward Currenta ISM 20 Body Diode Voltage VSD IS = 1.5 A 0.69 1.2 V Body Diode Reverse Recovery Time trr N-Channel IF = 2 A, dI/dt = 100 A/µs, TJ = 25 °C 62 95 ns Body Diode Reverse Recovery Charge Qrr 62 95 nC Reverse Recovery Fall Time ta 26 nS Reverse Recovery Rise Time tb 36 |
类似零件编号 - SI4904DY |
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类似说明 - SI4904DY |
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