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SI4778DY-T1-GE3 数据表(PDF) 4 Page - Vishay Siliconix |
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SI4778DY-T1-GE3 数据表(HTML) 4 Page - Vishay Siliconix |
4 / 10 page www.vishay.com 4 Document Number: 69817 S09-0394-Rev. B, 09-Mar-09 Vishay Siliconix Si4778DY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 TJ = 150 °C 10 VSD - Source-to-Drain Voltage (V) 1 TJ = 25 °C 100 TJ - Temperature (°C) 1.0 1.2 1.4 1.6 1.8 2.0 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA On-Resistance vs. Gate-to-Source Voltage Single Pulse Power ID = 7 A VGS - Gate-to-Source Voltage (V) 0.00 0.02 0.04 0.06 0.08 0246 8 10 TA = 125 °C TA = 25 °C 0 5 10 15 20 25 30 Time (s) 10 1000 0.1 0.01 0.001 100 1 Safe Operating Area, Junction-to-Ambient VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 1 0.1 1 10 100 0.01 10 0.1 TA = 25 °C Single Pulse 10 ms 100 ms DC 1s 10 s Limited byRDS(on)* 1ms BVDSS Limited 100 µs |
类似零件编号 - SI4778DY-T1-GE3 |
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类似说明 - SI4778DY-T1-GE3 |
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