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SI4622DY-T1-GE3 数据表(PDF) 2 Page - Vishay Siliconix

部件名 SI4622DY-T1-GE3
功能描述  Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
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制造商  VISHAY [Vishay Siliconix]
网页  http://www.vishay.com
标志 VISHAY - Vishay Siliconix

SI4622DY-T1-GE3 数据表(HTML) 2 Page - Vishay Siliconix

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Document Number: 68695
S09-0764-Rev. B, 04-May-09
Vishay Siliconix
Si4622DY
New Product
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
Ch-1
30
V
VGS = 0 V, ID = 250 µA
Ch-2
30
VDS Temperature Coefficient
ΔV
DS/TJ
ID = 250 µA
Ch-2
33
mV/°C
VGS(th) Temperature Coefficient
ΔV
GS(th)/TJ
ID = 250 µA
Ch-2
- 4.7
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 1 mA
Ch-1
1.5
2.5
V
VDS = VGS, ID = 1 mA
Ch-2
1
2.2
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Ch-1
100
nA
VDS = 0 V, VGS = ± 16 V
Ch-2
100
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V
Ch-1
0.04
0.2
mA
VDS = 30 V, VGS = 0 V
Ch-2
1
µA
VDS = 30 V, VGS = 0 V, TJ = 100 °C
Ch-1
4.4
44
mA
VDS = 30 V, VGS = 0 V, TJ = 100 °C
Ch-2
5
µA
On-State Drain Currentb
ID(on)
VDS ≥ 5 V, VGS = 10 V
Ch-1
25
A
VDS ≥ 5 V, VGS = 10 V
Ch-2
20
Drain-Source On-State Resistanceb
RDS(on)
VGS = 10 V, ID = 9.6 A
Ch-1
0.0132 0.0160
Ω
VGS = 10 V, ID = 6.7 A
Ch-2
0.022
0.0264
VGS = 4.5 V, ID = 8.9 A
Ch-1
0.0155 0.0186
VGS = 4.5 V, ID = 6.4 A
Ch-2
0.0240 0.0290
Forward Transconductanceb
gfs
VDS = 15 V, ID = 9.6 A
Ch-1
94
S
VDS = 15 V, ID = 6.7 A
Ch-2
10
Dynamica
Input Capacitance
Ciss
Channel-1
VDS = 15 V, VGS = 0 V, f = 1 MHz
Channel-2
VDS = 15 V, VGS = 0 V, f = 1 MHz
Ch-1
2458
pF
Ch-2
760
Output Capacitance
Coss
Ch-1
385
Ch-2
110
Reverse Transfer Capacitance
Crss
Ch-1
150
Ch-2
50
Total Gate Charge
Qg
VDS = 15 V, VGS = 10 V, ID = 9.6 A
Ch-1
40
60
nC
VDS = 15 V, VGS = 10 V, ID = 6.7 A
Ch-2
13.2
20
Channel-1
VDS = 15 V, VGS = 4.5 V, ID = 9.6 A
Channel-2
VDS = 15 V, VGS = 4.5 V, ID = 6.7 A
Ch-1
19
29
Ch-2
6
12
Gate-Source Charge
Qgs
Ch-1
8
Ch-2
2.1
Gate-Drain Charge
Qgd
Ch-1
6
Ch-2
1.4
Gate Resistance
Rg
f = 1 MHz
Ch-1
0.26
1.3
2.6
Ω
Ch-2
0.62
3.1
6.2


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