SI4599DY-T1-GE3 datasheet(6/15 Pages) VISHAY

部件名	SI4599DY-T1-GE3

功能描述	N- and P-Channel 40-V (D-S) MOSFET

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制造商	VISHAY [Vishay Siliconix]

网页	http://www.vishay.com

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Document Number: 68971

S-82619-Rev. A, 03-Nov-08

Vishay Siliconix

Si4599DY

New Product

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

limit.

Current Derating*

0

2

5

6

8

0

25

50

75

100

125

150

TC - Case Temperature (°C)

4

Power Derating, Junction-to-Foot

0

0.8

1.6

2.4

3.2

4.0

0

25

50

75

100

125

150

TC - Case Temperature (°C)

Power Derating, Junction-to-Ambient

0.0

0.3

0.6

0.9

1.2

1.5

0

25

50

75

100

125

150

TA -Ambient Temperature (°C)

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