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SI4511DY 数据表(PDF) 2 Page - Vishay Siliconix |
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SI4511DY 数据表(HTML) 2 Page - Vishay Siliconix |
2 / 12 page www.vishay.com 2 Document Number: 72223 S09-0867-Rev. E, 18-May-09 Vishay Siliconix Si4511DY Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA N-Ch 0.6 1.8 V VDS = VGS, ID = - 250 µA P-Ch - 0.6 - 1.4 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 16 V N-Ch ± 100 nA VDS = 0 V, VGS = ± 12 V P-Ch ± 100 Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V N-Ch 1 µA VDS = - 20 V, VGS = 0 V P-Ch - 1 VDS = 20 V, VGS = 0 V, TJ = 55 °C N-Ch 5 VDS = - 20 V, VGS = 0 V, TJ = 55 °C P-Ch - 5 On-State Drain Currentb ID(on) VDS = 5 V, VGS = 10 V N-Ch 40 A VDS = - 5 V, VGS = - 4.5 V P-Ch - 40 Drain-Source On-State Resistanceb RDS(on) VGS = 10 V, ID = 9.6 A N-Ch 0.0115 0.0145 Ω VGS = - 4.5 V, ID = - 6.2 A P-Ch 0.022 0.033 VGS = 4.5 V, ID = 8.6 A N-Ch 0.0135 0.017 VGS = - 2.5 V, ID = - 5 A P-Ch 0.035 0.050 Forward Transconductanceb gfs VDS = 15 V, ID = 9.6 A N-Ch 33 S VDS = - 15 V, ID = - 6.2 A P-Ch 17 Diode Forward Voltagb VSD IS = 1.7 A, VGS = 0 V N-Ch 0.8 1.2 V IS = - 1.7 A, VGS = 0 V P-Ch - 0.8 - 1.2 Dynamica Total Gate Charge Qg N-Channel VDS = 10 V, VGS = 4.5 V, ID = 9.6 A P-Channel VDS = - 10 V, VGS = - 4.5 V, ID = - 6.2 A N-Ch 11.5 18 nC P-Ch 17 20 Gate-Source Charge Qgs N-Ch 3.7 P-Ch 4.1 Gate-Drain Charge Qgd N-Ch 3.3 P-Ch 4.3 Turn-On Delay Time td(on) N-Channel VDD = 10 V, RL = 10 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω P-Channel VDD = - 10 V, RL = 10 Ω ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω N-Ch 12 20 ns P-Ch 25 40 Rise Time tr N-Ch 12 20 P-Ch 30 45 Turn-Off Delay Time td(off) N-Ch 55 85 P-Ch 70 105 Fall Time tf N-Ch 15 25 P-Ch 50 75 Source-Drain Reverse Recovery Time trr IF = 1.7 A, dI/dt = 100 A/µs N-Ch 50 100 IF = - 1.7 A, dI/dt = 100 A/µs P-Ch 40 80 |
类似零件编号 - SI4511DY |
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类似说明 - SI4511DY |
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