SI4500BDY-T1-E3 datasheet(4/12 Pages) VISHAY

部件名	SI4500BDY-T1-E3

功能描述	Complementary MOSFET Half-Bridge (N- and P-Channel)

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制造商	VISHAY [Vishay Siliconix]

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Document Number: 72281

S09-0705-Rev. D, 27-Apr-09

Vishay Siliconix

Si4500BDY

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Source-Drain Diode Forward Voltage

Threshold Voltage

VSD - Source-to-Drain Voltage (V)

TJ = 150 °C

TJ = 25 °C

30

10

0

0.3

0.6

0.9

1.2

1.5

- 0.6

- 0.4

- 0.2

0.0

0.2

0.4

- 50

- 25

0

25

50

75

100

125

150

TJ - Temperature (°C)

ID = 250 µA

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power

0.00

0.01

0.02

0.03

0.04

0.05

0.06

0.07

0.08

0

1234

5

VGS - Gate-to-Source Voltage (V)

ID = 9.1 A

ID = 3.3 A

0

60

80

40

50

Time (s)

1

600

70

0.1

0.001

0.01

10

100

30

20

10

Safe Operating Area

VDS - Drain-to-Source Voltage (V)

100

1

0.1

1

10

100

0.01

10

TA = 25 °C

Single Pulse

P(t) = 10

DC

0.1

ID(on)

Limited

BVDSS Limited

P(t) = 1

P(t) = 0.1

P(t) = 0.01

P(t) = 0.001

P(t) = 0.0001

* VGS > minimum VGS at which RDS(on) is specified

Limited by R(DS)on*

IDM Limited

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