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SI4500BDY-T1-E3 数据表(PDF) 4 Page - Vishay Siliconix |
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SI4500BDY-T1-E3 数据表(HTML) 4 Page - Vishay Siliconix |
4 / 12 page www.vishay.com 4 Document Number: 72281 S09-0705-Rev. D, 27-Apr-09 Vishay Siliconix Si4500BDY N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage VSD - Source-to-Drain Voltage (V) TJ = 150 °C TJ = 25 °C 30 10 0 0 0.3 0.6 0.9 1.2 1.5 - 0.6 - 0.4 - 0.2 0.0 0.2 0.4 - 50 - 25 0 25 50 75 100 125 150 TJ - Temperature (°C) ID = 250 µA On-Resistance vs. Gate-to-Source Voltage Single Pulse Power 0.00 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0 1234 5 VGS - Gate-to-Source Voltage (V) ID = 9.1 A ID = 3.3 A 0 60 80 40 50 Time (s) 1 600 70 0.1 0.001 0.01 10 100 30 20 10 Safe Operating Area VDS - Drain-to-Source Voltage (V) 100 1 0.1 1 10 100 0.01 10 TA = 25 °C Single Pulse P(t) = 10 DC 0.1 ID(on) Limited BVDSS Limited P(t) = 1 P(t) = 0.1 P(t) = 0.01 P(t) = 0.001 P(t) = 0.0001 * VGS > minimum VGS at which RDS(on) is specified Limited by R(DS)on* IDM Limited |
类似零件编号 - SI4500BDY-T1-E3 |
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类似说明 - SI4500BDY-T1-E3 |
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