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SI4288DY-T1-GE3 数据表(PDF) 2 Page - Vishay Siliconix |
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SI4288DY-T1-GE3 数据表(HTML) 2 Page - Vishay Siliconix |
2 / 10 page www.vishay.com 2 Document Number: 67078 S10-2768-Rev. A, 29-Nov-10 Vishay Siliconix Si4288DY Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width 300 µs, duty cycle 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ.a Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 40 V VDS Temperature Coefficient V DS/TJ ID = 250 µA 49 mV/°C VGS(th) Temperature Coefficient V GS(th)/TJ - 5.2 Gate Threshold Voltage VGS(th) VDS = VGS, ID= 250 µA 1.2 2.5 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V 100 nA Zero Gate Voltage Drain Current IDSS VDS = 40 V, VGS = 0 V 1 µA VDS = 40 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currentb ID(on) VDS = 5 V, VGS = 10 V 20 A Drain-Source On-State Resistanceb RDS(on) VGS = 10 V, ID = 10 A 0.0165 0.0200 VGS = 4.5 V, ID = 7 A 0.019 0.023 Forward Transconductanceb gfs VDS = 15 V, ID = 10 A 35 S Dynamica Input Capacitance Ciss VDS = 20 V, VGS = 0 V, ID = 1 MHz 580 pF Output Capacitance Coss 100 Reverse Transfer Capacitance Crss 42 Total Gate Charge Qg VDS = 20 V, VGS = 10 V, ID = 10 A 10 15 nC VDS = 20 V, VGS = 4.5 V, ID = 10 A 4.9 7.4 Gate-Source Charge Qgs 1.5 Gate-Drain Charge Qgd 1.5 Gate Resistance Rg f = 1 MHz 0.6 2.7 5.4 Turn-On Delay Time td(on) VDD = 20 V, RL = 2 ID 10 A, VGEN = 10 V, Rg = 1 714 ns Rise Time tr 918 Turn-Off Delay Time td(off) 16 32 Fall Time tf 816 Turn-On Delay Time td(on) VDD = 20 V, RL = 2 ID 10 A, VGEN = 4.5 V, Rg = 1 12 24 Rise Time tr 10 20 Turn-Off Delay Time td(off) 13 26 Fall Time tf 816 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C 2.6 A Pulse Diode Forward Currenta ISM 50 Body Diode Voltage VSD IS = 3 A 0.77 1.2 V Body Diode Reverse Recovery Time trr IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C 15 30 ns Body Diode Reverse Recovery Charge Qrr 7.5 15 nC Reverse Recovery Fall Time ta 9 ns Reverse Recovery Rise Time tb 6 |
类似零件编号 - SI4288DY-T1-GE3 |
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类似说明 - SI4288DY-T1-GE3 |
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