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SI4276DY 数据表(PDF) 9 Page - Vishay Siliconix |
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SI4276DY 数据表(HTML) 9 Page - Vishay Siliconix |
9 / 15 page Vishay Siliconix Si4276DY Document Number: 66599 S10-1289-Rev. A, 31-May-10 www.vishay.com 9 CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 0.1 1 10 100 0.0 0.3 0.6 0.9 1.2 TJ = 25 °C TJ = 150 °C VSD - Source-to-Drain Voltage (V) 1.1 1.3 1.5 1.7 1.9 2.1 - 50 - 25 0 25 50 75 100 125 150 ID = 250 μA TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0 0.015 0.030 0.045 0.060 02 4 6 8 10 TJ = 25 °C ID =6.8 A TJ = 125 °C VGS - Gate-to-Source Voltage (V) 0 10 20 30 40 50 Time (s) 10 1000 0.1 0.01 0.001 100 1 Safe Operating Area, Junction-to-Ambient 100 1 0.1 1 10 100 0.01 10 0.1 TA = 25 °C Single Pulse 1s 10 s Limited by RDS(on)* BVDSS Limited 1ms 100 μs 10 ms DC 100 ms VDS - Drain-to-Source Voltage (V) *V GS > minimum VGS at which RDS(on) is specified |
类似零件编号 - SI4276DY |
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类似说明 - SI4276DY |
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