SI4108DY datasheet(1/10 Pages) VISHAY

部件名	SI4108DY

功能描述	N-Channel 75-V (D-S) MOSFET

Download	10 Pages

Scroll/Zoom	100%

制造商	VISHAY [Vishay Siliconix]

网页	http://www.vishay.com

标志

1 / 10 page

Vishay Siliconix

Si4108DY

New Product

Document Number: 68635

S-81195-Rev. A, 26-May-08

www.vishay.com

1

N-Channel 75-V (D-S) MOSFET

FEATURES

•

Halogen-free

•

TrenchFET® Power MOSFET

•

100 % Rg Tested

•

100 % UIS Tested

APPLICATIONS

•

Primary Side Switch

•

Half Bridge

•

Intermediate Bus Converter

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)

ID (A)

a

Qg (Typ.)

75

0.0098 at VGS = 10 V

20.5

36 nC

S

D

S

G

D

SO-8

5

6

7

8

Top View

2

3

4

1

Ordering Information: Si4108DY-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

G

D

S

Notes:

a. Based on TC = 25 °C.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. Maximum under Steady State conditions is 80 °C/W.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

75

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

20.5

A

TC = 70 °C

16.4

TA = 25 °C

13.8b, c

TA = 70 °C

11.1b, c

Pulsed Drain Current

IDM

60

Continuous Source-Drain Diode Current

TC = 25 °C

IS

6.5

TA = 25 °C

3b, c

Single Pulse Avalanche Current

L = 0.1 mH

IAS

32

Single Pulse Avalanche Energy

EAS

51.2

mJ

Maximum Power Dissipation

TC = 25 °C

PD

7.8

W

TC = 70 °C

5

TA = 25 °C

3.6b, c

TA = 70 °C

2.3b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)

260

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambientb, d

t

≤ 10 s

RthJA

29

35

°C/W

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

13

16

RoHS

COMPLIANT

类似零件编号 - SI4108DY

制造商	部件名	数据表	功能描述
Vishay Siliconix	SI4100DY	197Kb / 4P	N-Channel 100-V (D-S) MOSFET Rev. A, 20-Aug-07
Vishay Telefunken	SI4100DY	247Kb / 10P	N-Channel 100-V (D-S) MOSFET
VBsemi Electronics Co.,...	SI4100DY-T1-E3	610Kb / 9P	N-Channel 100 V (D-S) MOSFET
Vishay Siliconix	SI4100DY	178Kb / 9P	N-Channel 100-V (D-S) MOSFET 01-Jan-2022
Vishay Siliconix	SI4101DY	210Kb / 9P	P-Channel 30 V (D-S) MOSFET Rev. A, 21-Jan-13

More results

类似说明 - SI4108DY

制造商	部件名	数据表	功能描述
Vishay Siliconix	SUP90N08-6M8P	176Kb / 7P	N-Channel 75-V (D-S) MOSFET Rev. C, 16-Nov-09
	SUM90N08-6M2P	116Kb / 6P	N-Channel 75-V (D-S) MOSFET Rev. A, 03-Dec-07
	SUP90N08-6M8P	116Kb / 6P	N-Channel 75-V (D-S) MOSFET Rev. A, 03-Dec-07
	SUP90N08-4M8P	104Kb / 6P	N-Channel 75-V (D-S) MOSFET Rev. C, 06-Aug-07
	SI7812DN	551Kb / 14P	N-Channel 75-V (D-S) MOSFET Rev. D, 29-Dec-08
Analog Power	AM230N07-03B	334Kb / 5P	N-Channel 75-V (D-S) MOSFET
	AM90N07-04B	364Kb / 5P	N-Channel 75-V (D-S) MOSFET
	AM90N07-09B	336Kb / 5P	N-Channel 75-V (D-S) MOSFET
Vishay Siliconix	SIE818DF	192Kb / 10P	N-Channel 75-V (D-S) MOSFET Rev. B, 13-Jul-09
	SUM110N08-07	51Kb / 5P	N-Channel 75-V (D-S) MOSFET Rev. C, 21-Oct-02
	SI7174DP	513Kb / 13P	N-Channel 75-V (D-S) MOSFET Rev. A, 14-Apr-08