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SI3585CDV-T1-GE3 数据表(PDF) 2 Page - Vishay Siliconix |
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SI3585CDV-T1-GE3 数据表(HTML) 2 Page - Vishay Siliconix |
2 / 16 page www.vishay.com 2 Document Number: 67470 S11-0613-Rev. A, 04-Apr-11 Vishay Siliconix Si3585CDV This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA N-Ch 20 V VGS = 0 V, ID = - 250 µA P-Ch - 20 VDS Temperature Coefficient V DS/TJ ID = 250 µA N-Ch 15 mV/°C ID = - 250 µA P-Ch - 16.2 VGS(th) Temperature Coefficient V GS(th)/TJ ID = 250 µA N-Ch - 2.8 ID = - 250 µA P-Ch 2.5 Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA N-Ch 0.6 1.5 V VDS = VGS, ID = - 250 µA P-Ch - 0.6 - 1.5 Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 12 V N-Ch ± 100 nA P-Ch ± 100 Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V N-Ch 1 µA VDS = - 20 V, VGS = 0 V P-Ch - 1 VDS = 20 V, VGS = 0 V, TJ = 55 °C N-Ch 10 VDS = - 20 V, VGS = 0 V, TJ = 55 °C P-Ch - 10 On-State Drain Currentb ID(on) VDS 5 V, VGS = 4.5 V N-Ch 12 A VDS - 5 V, VGS = - 4.5 V P-Ch - 5 Drain-Source On-State Resistanceb RDS(on) VGS = 4.5 V, ID = 2.5 A N-Ch 0.048 0.058 VGS = - 4.5 V, ID = - 1.9 A P-Ch 0.162 0.195 VGS = 2.5 V, ID = 1 A N-Ch 0.065 0.078 VGS = - 2.5 V, ID = - 1 A P-Ch 0.263 0.316 Forward Transconductanceb gfs VDS = 10 V, ID = 35 A N-Ch 12 S VDS = - 10 V, ID = - 1.9 A P-Ch 1 Dynamica Input Capacitance Ciss N-Channel VDS = 10 V, VGS = 0 V, f = 1 MHz P-Channel VDS = - 10 V, VGS = 0 V, f = 1 MHz N-Ch 150 pF P-Ch 210 Output Capacitance Coss N-Ch 53 P-Ch 50 Reverse Transfer Capacitance Crss N-Ch 22 P-Ch 35 Total Gate Charge Qg VDS = 10 V, VGS = 5 V, ID = 3.5 A N-Ch 3.2 4.8 nC VDS = - 10 V, VGS = - 5 V, ID = - 1.9 A P-Ch 6 9 N-Channel VDS = 10 V, VGS = 4.5 V, ID = 3.5 A P-Channel VDS = - 10 V, VGS = - 4.5 V, ID = - 1.9 A N-Ch 1.6 2.4 P-Ch 2.9 4.3 Gate-Source Charge Qgs N-Ch 0.3 P-Ch 0.6 Gate-Drain Charge Qgd N-Ch 0.4 P-Ch 0.9 Gate Resistance Rg f = 1 MHz N-Ch 0.9 4.8 9.6 P-Ch 1.2 6.2 12.4 |
类似零件编号 - SI3585CDV-T1-GE3 |
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类似说明 - SI3585CDV-T1-GE3 |
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