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BUW24 Datasheet(数据表) 2 Page - Inchange Semiconductor Company Limited

部件型号  BUW24
说明  Silicon NPN Power Transistors
下载  3 Pages
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制造商  ISC [Inchange Semiconductor Company Limited]
网页  http://www.iscsemi.cn
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BUW24 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

   
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Inchange Semiconductor
Product Specification
2
Silicon NPN Power Transistors
BUW24
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO
Collector-emitter breakdown voltage
IC=10mA ; IB=0
350
V
VCEsat
Collector-emitter saturation voltage
IC=4A; IB=0.8A
0.8
V
VBEsat
Base-emitter saturation voltage
IC=4A; IB=0.8A
1.5
V
ICBO
Collector cut-off current
VCB=450V; IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=7V; IC=0
0.1
mA
hFE-1
DC current gain
IC=1A ; VCE=5V
10
80
hFE-2
DC current gain
IC=4A ; VCE=5V
15
Switching times
ton
Turn-on time
2.0
μs
ts
Storage time
4.0
μs
tf
Fall time
IC=5A IB1=- IB2=0.5A
RL=10Ω
1.2
μs




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