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IRFD020 数据表(PDF) 2 Page - Vishay Siliconix |
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IRFD020 数据表(HTML) 2 Page - Vishay Siliconix |
2 / 8 page www.vishay.com Document Number: 91465 2 S11-0915-Rev. A, 16-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFD020, SiHFD020 Vishay Siliconix Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 %. c. VDD = 25 V, starting TJ = 25 °C, L = 100 μH, Rg = 25 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient RthJA - 120 °C/W SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 50 - - V Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 500 nA Zero Gate Voltage Drain Current IDSS VDS = max. rating, VGS = 0 V - - 250 μA VDS = max. rating x 0.8, VGS = 0 V, TC = 125 - - 1000 On-State Drain Currentb ID(on) VGS = 10 V VDS > ID(on) x RDS(on) max. 2.4 - - A Drain-Source On-State Resistanceb RDS(on) VGS = 10 V ID = 1.4 A - 0.080 0.10 Forward Transconductanceb gfs VDS = 20 V, ID = 7.5 A 4.9 7.3 - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1.0 MHz - 400 - pF Output Capacitance Coss - 260 - Reverse Transfer Capacitance Crss -44 - Total Gate Charge Qg VGS = 10 V ID = 15 A, VDS = max. rating x 0.8 -16 24 nC Gate-Source Charge Qgs -4.7 7.1 Gate-Drain Charge Qgd -4.7 7.1 Turn-On Delay Time td(on) VDD = 25 V, ID = 15 A, Rg = 18 , RD = 1.7 -8.7 13 ns Rise Time tr -55 83 Turn-Off Delay Time td(off) -16 24 Fall Time tf -26 39 Internal Drain Inductance LD Between lead, 6 mm (0.25") from package and center of die contact -4.0 - nH Internal Source Inductance LS -6.0 - Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS MOSFET symbol showing the integral reverse p - n junction diode -- 2.4 A Pulsed Diode Forward Currentc ISM -- 19 Body Diode Voltagea VSD TC = 25 °C, IS = 2.4 A, VGS = 0 V - - 1.4 V Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = 15 A, dI/dt = 100 A/μs 57 130 310 ns Body Diode Reverse Recovery Charge Qrr 0.17 0.34 0.85 μC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) D S G S D G |
类似零件编号 - IRFD020 |
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类似说明 - IRFD020 |
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