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UD1006LS-SB5 Datasheet(数据表) 1 Page - Sanyo Semicon Device

部件型号  UD1006LS-SB5
说明  Low VF Switching Diode
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制造商  SANYO [Sanyo Semicon Device]
网页  https://www.sanyo-av.com/us/
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UD1006LS-SB5 Datasheet(HTML) 1 Page - Sanyo Semicon Device

   
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UD1006LS-SB5
No. A1544-1/3
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer
's
products or equipment.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
intended use, our customer shall be solely responsible for the use.
Features
High breakdown voltage (VRRM=600V).
High reliability.
One-point fixing type plastic molded package facilitating easy mounting and heat dissipation.
Low VF.
Low noise at the time of reverse recovery.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Repetitive Peak Reverse Voltage
VRRM
600
V
Nonrepetitive Peak Reverse Surge Voltage
VRSM
600
V
Average Output Current
IO
10
A
R.M.S Forward Current
IF(RMS)
18
A
Surge Forward Current
IFSM
Sine wave 10ms 1pulse
120
A
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Reverse Voltage
VR
IR=1mA
600
V
Forward Voltage
VF
IF=10A
1.15
1.3
V
Reverse Current
IR
VR=600V
20
μA
Reverse Recovery Time
trr1IF=10A, di / dt=100A/μs
100
150
ns
trr2IF=0.5A, IR=1A
60
ns
Thermal Resistance
Rth(j-c)
Junction -Case : Smoothed DC
4.9
°C / W
Ordering number : ENA1544
90209SA TK IM TC-00002067
SANYO Semiconductors
DATA SHEET
UD1006LS-SB5
www.semiconductor-sanyo.com/network
Diffused Junction Silicon Diode
Low VF Switching Diode




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