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BU2522DF 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BU2522DF 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU2522DF ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ;IB= 0,L= 25mH 800 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 600mA ;IC= 0 7.5 13.5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 6A ;IB= 1.2A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 6A ;IB= 1.2A 1.3 V ICES Collector Cutoff Current VCE= BVCES; VBE= 0 VCE= BVCES; VBE= 0;TC=125℃ 0.25 2.0 mA IEBO Emitter Cutoff Current VEB= 7.5V; IC= 0 100 300 mA hFE-1 DC Current Gain IC= 1A ; VCE= 5V 10 hFE-2 DC Current Gain IC= 6A ; VCE= 5V 5 8 VECF C-E Diode Forward Voltage IF= 6A 2.0 V COB Output Capacitance IE= 0 ; VCB= 10V;ftest= 1MHz 115 pF isc Website:www.iscsemi.cn |
类似零件编号 - BU2522DF |
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类似说明 - BU2522DF |
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