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BU2520D 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BU2520D 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors BU2520D CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH 800 V V(BR)EBO Emitter-base breakdown voltage IB=600mA; IC=0 7.5 13.5 V VCEsat Collector-emitter saturation voltage IC=6A; IB=1.2A 5.0 V VBEsat Base-emitter saturation voltage IC=6A; IB=1.2A 1.3 V ICES Collector cut-off current VCE=ratedVCE; VBE=0 Tj=125℃ 1.0 2.0 mA IEBO Emitter cut-off current VEB=7.5V; IC=0 100 300 mA hFE-1 DC current gain IC=1A ; VCE=5V 23 hFE-2 DC current gain IC=6A ; VCE=5V 5 7 10 VF Diode forward voltage IF=6A 2.2 V CC Collector capacitance IE=0 ;VCB=10V;f=1MHz 115 pF |
类似零件编号 - BU2520D |
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类似说明 - BU2520D |
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