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BU2520AW 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BU2520AW 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU2520AW ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0, L= 25mH 800 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 7.5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.2A B 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 1.2A B 1.1 V ICES Collector Cutoff Current VCE= 1500V; VBE= 0 VCE= 1500V; VBE= 0; TC=125℃ 1.0 2.0 mA IEBO Emitter Cutoff Current VEB= 7.5V; IC= 0 1.0 mA hFE-1 DC Current Gain IC= 0.1A; VCE= 5V 13 hFE-2 DC Current Gain IC= 6A; VCE= 5V 5 9.5 COB Output Capacitance IE= 0; VCB= 10V; ftest= 1MHz 115 pF Switching times tstg Storage Time 5.5 μs tf Fall Time IC= 6A , IB(end)= 1.0A;LC= 650μH; LB= 5.3μH; Cfb= 19nF; -VBB= 4V; (-dIB/dt= 0.8A/μs) 0.5 μs isc Website:www.iscsemi.cn 2 |
类似零件编号 - BU2520AW |
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类似说明 - BU2520AW |
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