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BU323AP 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BU323AP 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 3 page Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU323AP DESCRIPTION ·With TO-3PN package ·DARLINGTON ·Low collector saturation voltage APPLICATIONS ·Designed for automotive ignition,switching regulator and motor control applications. PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings (Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCEO(SUS) Collector-emitter voltage Open base 400 V VCEV Collector-emitter voltage Open base 475 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 10 A ICM Collector current-peak 16 A IB Base current 3 A PD Total power dissipation TC=25℃ 125 W Tj Junction temperature -65~200 ℃ Tstg Storage temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-C Thermal resistance junction to case 1.0 ℃/W Fig.1 simplified outline (TO-3PN) and symbol |
类似零件编号 - BU323AP |
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类似说明 - BU323AP |
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