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BU323AP 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BU323AP 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors BU323AP CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A; IB=0;L=10mH 400 V VCER(SUS) Collector-emitter sustaining voltage IC=3A; RBE=100Ω;L=500μH 475 V VCEsat-1 Collector-emitter saturation voltage IC=3 A;IB=60mA 1.5 V VCEsat-2 Collector-emitter saturation voltage IC=6A;IB=120m A 1.7 V VCEsat-3 Collector-emitter saturation voltage IC=10A;IB=300m A 2.7 V VBEsat-1 Base-emitter saturation voltage IC=6A;IB=120m A 2.2 V VBEsat-2 Base-emitter saturation voltage IC=10A;IB=300m A 3 V ICER Collector cut-off current VCE=Rated;VBE=100Ω 1 mA IEBO Emitter cut-off current VEB=6V; IC=0 40 mA ICBO Collector cut-off current VCB=Rated; IE=0 1 mA hFE-1 DC current gain IC=3A ; VCE=6V 300 550 hFE-2 DC current gain IC=6A ; VCE=6V 150 350 2000 hFE-3 DC current gain IC=10A ; VCE=6V 50 150 VBE Base-emitter on voltage IC=10A ; VCE=6V 2.5 V VF Diode forward voltage IF=10A 2 3.5 V Cob Output capacitance VCB=10V,IE=0;fT=100kHz 165 350 pF Switching times ts Storage time 7.5 15 μs tf Fall time IC=6A ; IB1=IB2=0.3A VCC=12V ; 5.2 15 μs |
类似零件编号 - BU323AP |
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类似说明 - BU323AP |
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